M58WR064 STMICROELECTRONICS [STMicroelectronics], M58WR064 Datasheet - Page 59

no-image

M58WR064

Manufacturer Part Number
M58WR064
Description
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58WR064
Manufacturer:
ST
Quantity:
10 850
Part Number:
M58WR064
Manufacturer:
ST
0
Part Number:
M58WR064-FU70ZB6S
Manufacturer:
ST
Quantity:
125
Part Number:
M58WR064-FU70ZB6S
Manufacturer:
SIEMENS
Quantity:
412
Part Number:
M58WR064-FU70ZB6S
Manufacturer:
ST
0
Part Number:
M58WR064EB70ZB6
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58WR064EB70ZB6
Manufacturer:
ST
0
Part Number:
M58WR064EB70ZB6T
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
M58WR064FP70ZB6
Manufacturer:
ROHM
Quantity:
6 259
Part Number:
M58WR064FP70ZB6
Manufacturer:
ST
Quantity:
20 000
Part Number:
M58WR064FU70
Manufacturer:
SHARP
Quantity:
1
Table 32. CFI Query System Interface Information
Table 33. Device Geometry Definition
Offset Word
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Mode
2Ch
2Ah
2Bh
27h
28h
29h
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
38h
00C0h
000Ah
0017h
0022h
0017h
0004h
0003h
0000h
0003h
0004h
0002h
0000h
Data
Reserved
0017h
0001h
0000h
0003h
0000h
0002h
007Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
Data
V
V
V
V
Typical time-out per single byte/word program = 2
Typical time-out for quadruple word program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for quadruple word = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
Region 1 Information
Number of identical-size erase blocks = 007Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase blocks = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Reserved for future erase block region information
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
n
in number of bytes
HEX value in volts
BCD value in 100 millivolts
HEX value in volts
BCD value in 100 millivolts
BCD value in volts
BCD value in 100 millivolts
BCD value in volts
BCD value in 100 millivolts
Description
Description
n
n
times typical
ms
n
times typical
n
times typical
n
ms
n
n
n
µs
times typical
µs
M58WR064ET, M58WR064EB
n
64 KByte
8 MByte
8 KByte
Async.
8 Byte
Value
127
x16
NA
128µs
128µs
Value
2
8
16µs
1.7V
2.2V
1.7V
12V
8µs
NA
NA
1s
4s
59/82

Related parts for M58WR064