M58WR064 STMICROELECTRONICS [STMicroelectronics], M58WR064 Datasheet - Page 37

• Manufacturer Part Number: M58WR064
• Description: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 18. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
I
Symbol
DD6
I
I
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
LO
LI
2. V
(1,2)
(1)
(1)
(1)
(1)
DD
Input Leakage Current
Output Leakage Current
Supply Current
Asynchronous Read (f=6MHz)
Supply Current
Synchronous Read (f=40MHz)
Supply Current
Synchronous Read (f=54MHz)
Supply Current
(Reset)
Supply Current (Standby)
Supply Current (Automatic
Standby)
Supply Current (Program)
Supply Current (Erase)
Supply Current
(Dual Operations)
Supply Current Program/ Erase
Suspended (Standby)
V
V
V
V
Dual Operation current is the sum of read and program or erase currents.
PP
PP
PP
PP
Supply Current (Program)
Supply Current (Erase)
Supply Current (Read)
Supply Current (Standby)
Parameter
Program/Erase in one
Program/Erase in one
Read in another Bank
Read in another Bank
Bank, Asynchronous
Bank, Synchronous
0V
RP = V
0V
E = V
E = V
Test Condition
E = V
E = V
Continuous
Continuous
V
V
V
V
V
V
V
V
V
V
PP
PP
PP
PP
V
PP
PP
PP
PP
PP
PP
4 Word
8 Word
4 Word
8 Word
V
OUT
IL
IL
DD
DD
IN
= V
= V
= V
= V
SS
, G = V
, G = V
= V
= V
= V
= V
± 0.2V
± 0.2V
V
V
± 0.2V
PPH
PPH
PPH
PPH
DD
DD
DD
DD
DD
DD
V
V
DDQ
DDQ
IH
IH
Min
M58WR064ET, M58WR064EB
Typ
0.2
0.2
0.2
0.2
10
13
10
10
10
10
10
13
16
10
3
6
8
6
7
8
8
2
2
Max
±1
±1
13
14
10
16
18
25
50
50
50
15
20
15
20
26
30
50
6
5
5
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
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