CY14E064L-SZ25XC CYPRESS [Cypress Semiconductor], CY14E064L-SZ25XC Datasheet

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CY14E064L-SZ25XC

Manufacturer Part Number
CY14E064L-SZ25XC
Description
64 Kbit (8K x 8) nvSRAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Cypress Semiconductor Corporation
Document Number: 001-06543 Rev. *D
Features
Logic Block Diagram
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
25 ns and 45 ns access times
Hands off automatic STORE on power down with external
68 mF capacitor
STORE to QuantumTrap® non-volatile elements is initiated
by software, hardware or AutoStore on power down
RECALL to SRAM initiated by software or power up
Unlimited READ, WRITE and RECALL cycles
10 mA typical ICC at 200 ns cycle time
1,000,000 STORE cycles to QuantumTrap
100 year data retention to QuantumTrap
Single 5V operation +10%
Commercial temperature
SOIC package
RoHS compliance
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
5
6
7
8
9
11
12
A
0
COLUMN DEC
COLUMN I/O
A
STATIC RAM
1
128 X 512
ARRAY
A
2
A
3
198 Champion Court
A
4
Quantum Trap
A
10
128 X 512
STORE
RECALL
Functional Description
The Cypress CY14E064L is a fast static RAM with a
non-volatile element in each memory cell. The embedded
non-volatile elements incorporate QuantumTrap technology
producing the world’s most reliable non-volatile memory. The
SRAM provides unlimited read and write cycles, while
independent, non-volatile data resides in the highly reliable
QuantumTrap cell. Data transfers from the SRAM to the
non-volatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the non-volatile
memory. Both the STORE and RECALL operations are also
available under software control. A hardware STORE is
initiated with the HSB pin.
64 Kbit (8K x 8) nvSRAM
San Jose
V
CONTROL
CONTROL
CC
RECALL
POWER
STORE/
,
CA 95134-1709
V
CAP
SOFTWARE
DETECT
Revised August 7, 2007
HSB
CY14E064L
408-943-2600
A
OE
CE
WE
0
-
A
12
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CY14E064L-SZ25XC Summary of contents

Page 1

... Cypress Semiconductor Corporation Document Number: 001-06543 Rev Kbit ( nvSRAM Functional Description The Cypress CY14E064L is a fast static RAM with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology producing the world’s most reliable non-volatile memory. The ...

Page 2

... AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM to CAP non-volatile elements. Document Number: 001-06543 Rev 28-SOIC 5 6 Top View 7 8 (Not To Scale Description CY14E064L HSB DQ7 DQ6 DQ5 DQ4 DQ3 Page [+] Feedback ...

Page 3

... IO lines left LOW, internal circuitry turns off the output buffers t LOW. AutoStore Operation The CY14E064L stores data to nvSRAM using one of three storage operations: Document Number: 001-06543 Rev Hardware store activated by HSB 2. Software store activated by an address sequence 3 ...

Page 4

... RECALL request is latched. When V SWITCH once again exceeds the sense voltage of V cycle is automatically initiated and takes t If the CY14E064L WRITE state at the end of power up RECALL, the SRAM data is corrupted. To help avoid this situation Kohm resistor is connected either between WE and system V ...

Page 5

... STORE, the WRITE is inhibited until a negative transition detected. This protects against inadvertent writes during power up or brown out conditions. Noise Considerations The CY14E064L is a high speed memory. It must have a high frequency bypass capacitor of approximately 0.1 µF connected between V and V ...

Page 6

... Document Number: 001-06543 Rev. *D When the CY14E064L is connected for AutoStore operation (system V connected and V crosses V CC attempts to pull HSB LOW. If HSB does not actually get below of at least 2.2V the part stops trying to pull HSB LOW and abort the IL STORE attempt ...

Page 7

... All other inputs cycling Max CC STORE – 0.2). All others V < 0.2V or > Max, V < V < Max, V < V < > – CY14E064L + 2. 25°C) ................................................... 1.0W [1] .................................... 15 mA Min Max Unit Commercial – 0.2V). 2 μA ...

Page 8

... Input and Output Timing Reference Levels ................... 1.5 V Document Number: 001-06543 Rev. *D Test Conditions T = 25° MHz 3 Test Conditions 5.0V Output 512Ω CY14E064L Max Unit 28-SOIC Unit °C/W TBD °C/W TBD For Tri-state Specs R1 963Ω ...

Page 9

... CY14E064L Unit Min Max μs 550 10 ms 4.0 4.5 V μs 150 Page [+] Feedback ...

Page 10

... RESTORE STORE Document Number: 001-06543 Rev. *D [10,11 Part Min Description CY14E064L 45 ns Part Unit Max Min Max μ CY14E064L Unit Min Max 10 ms μs 1 700 300 ns Page [+] Feedback ...

Page 11

... ADDRESS (DATA OUT) STANDBY ICC Note 14. HSB must remain HIGH during READ and WRITE cycles. Document Number: 001-06543 Rev DATA VALID [4,14 ACE t LZCE t DOE t LZOE t ACTIVE PU CY14E064L [ HZCE t HZOE DATA VALID Page [+] Feedback ...

Page 12

... DATA IN Note 15 must be greater than V during address transitions. IH Document Number: 001-06543 Rev. *D [14,15 SCE PWE DATA VALID t HZWE HIGH IMPEDANCE SCE PWE DATA VALID CY14E064L t LZWE Page [+] Feedback ...

Page 13

... Document Number: 001-06543 Rev. *D Figure 9. AutoStore/Power Up RECALL t VSBL t DELAY BROWN OUT BROWN OUT AutoStore TM NO STROKE (NO SRAM WRITES) NO RECALL NO RECALL (V DID NOT GO (V DID NOT BELOW V ) BELOW V ) RESET RESET CY14E064L t STORE BROWN OUT AutoStore TM RECALL WHEN V RETURNS CC ABOVE VSWITCH Page [+] Feedback ...

Page 14

... DATA VALID DQ (DATA) t HLHX HSB (IN) t HLBL HSB (OUT) HIGH IMPEDANCE DATA VALID DQ (DATA OUT) Document Number: 001-06543 Rev ADDRESS # 6 DATA VALID Figure 11. Hardware STORE Cycle t STORE t DELAY CY14E064L [ STORE RECALL HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID Page [+] Feedback ...

Page 15

... 064 Pb-Free nvSRAM 14 - AutoStore + Software Store + Hardware Store Cypress Document Number: 001-06543 Rev. *D Option: T-Tape and Reel Blank - Std. Temperature Commercial (0 to 70°C) Package 28-SOIC Data Bus Voltage 5.0V CY14E064L Speed Density: 064 - 64 Kb Page [+] Feedback ...

Page 16

... Ordering Information Speed Package Diagram (ns) Ordering Code 25 CY14E064L-SZ25XCT CY14E064L-SZ25XC 25 CY14E064L-SZ25XIT CY14E064L-SZ25XI 35 CY14E064L-SZ35XCT CY14E064L-SZ35XC 35 CY14E064L-SZ35XIT CY14E064L-SZ35XI 45 CY14E064L-SZ45XCT CY14E064L-SZ45XC 45 CY14E064L-SZ45XIT CY14E064L-SZ45XI Package Diagrams Document Number: 001-06543 Rev. *D Package Type 001-10395 28-pin SOIC (Pb-Free) Commercial 001-10395 28-pin SOIC (Pb-Free) 001-10395 28-pin SOIC (Pb-Free) Industrial ...

Page 17

... Document History Page Document Title: CY14E064L 64 Kbit ( nvSRAM Document Number: 001-06543 Issue Orig. of REV. ECN NO. Date Change ** 427789 See ECN *A 437321 See ECN *B 472053 See ECN *C 503290 See ECN *D 1349963 See ECN UHA/SFV © Cypress Semiconductor Corporation, 2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product ...

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