HYB314400BJ-50- SIEMENS [Siemens Semiconductor Group], HYB314400BJ-50- Datasheet - Page 8

• Manufacturer Part Number: HYB314400BJ-50-
• Description: 1M x 4-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics (cont’d)
T
Parameter
Data to OE low delay
CAS high to data delay
OE high to data delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Data to CAS low delay
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS delay
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
CAS precharge to WE
Semiconductor Group
A
= 0 to 70 C,
V
CC
= 3.3 V
5, 6
0.3 V,
t
T
= 5 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DZO
CDD
ODD
WCH
WP
WCS
RWL
CWL
DS
DH
DZC
RWC
RWD
CWD
AWD
OEH
PC
CP
CPA
RAS
RHCP
PRWC
CPWD
8
min.
0
13
13
8
8
0
13
13
0
10
0
131
68
31
43
13
35
10
–
50
30
71
48
-50
Limit Values
max. min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
30
200k 60
–
–
–
HYB 314400BJ-50/-60
0
15
15
10
10
0
15
15
0
10
0
150
80
35
50
15
40
10
–
35
80
55
3.3 V 1M
-60
max.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
35
200k ns
–
–
–
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998-10-01
4 DRAM
13
14
14
15
16
16
13
15
15
15
7