HYB314400BJ-50- SIEMENS [Siemens Semiconductor Group], HYB314400BJ-50- Datasheet
HYB314400BJ-50-
Related parts for HYB314400BJ-50-
HYB314400BJ-50- Summary of contents
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Dynamic RAM Advanced Information • 1 048 576 words by 4-bit organization • operating temperature • Fast Page Mode Operation • Performance: t RAS access time RAC t CAS access time CAC t Access ...
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The HYB 314400BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for ...
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Pin Configuration Pin Names Address Input RAS Row Address Strobe CAS Column Address Strobe WE Read/Write Input OE Output Enable I/O1 - I/O4 Data Input/Output V Power Supply (+ 3 Ground ( ...
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... Counter (10 Row 10 Address Buffers (10) No.1 Clock RAS Generator Block Diagram Semiconductor Group HYB 314400BJ-50/-60 I/O1 I/O4 Data In Data Out Buffer Buffer 4 10 Sense Amplifier . . . 10 Row Memory Array 1024 Decoder 1024 . . . 4 3 DRAM OE 4 Column Decoder 4 I/O Gating 1024 1024 x 4 SPB02831 1998-10-01 ...
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Absolute Maximum Ratings Operating temperature range ........................................................................................... Storage temperature range.................................................................................... – 150 C Input/output voltage ............................................................................ – min ( Power Supply voltage ................................................................................................. – 4.6 V Data out ...
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DC Characteristics (cont’ Parameter Standby V supply current CC V (RAS = CAS = WE = – 0 Average supply current during CC CAS-before-RAS ...
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AC Characteristics 3 Parameter Common Parameters Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width Row address setup time Row address ...
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AC Characteristics (cont’ 3 Parameter Data to OE low delay CAS high to data delay OE high to data delay Write Cycle Write command hold time Write command pulse ...
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AC Characteristics (cont’ 3 Parameter CAS-before-RAS Refresh Cycle CAS setup time CAS hold time RAS to CAS precharge time Write to RAS precharge time Write hold time referenced to ...
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Notes 1. All voltages are referenced and depend on cycle rate. CC1 CC3 CC4 CC6 and depend on output loading. Specified values are measured with the output open. CC1 ...
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V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs ...
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V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...
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V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...
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V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...
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V IH RAS CAS RAH t ASR V IH Address Row RAD t RCS I/O (Inputs) V ...
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V IH RAS CAS RAH t t ASR ASC V IH Address Row RAD t WCS ...
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V IH RAS CSH t RCD V IH CAS RAD t t RAH t t ASR ASC V IH Address Row Column RWD t RCS ...
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V IH RAS CAS ASR V IH Address I/O (Outputs "H" or "L" RAS-Only Refresh Cycle Semiconductor Group RAS t RAH Row Hi Z ...
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RAS RPC CAS ODD V IH I/O (Inputs CDD t OEZ V OH ...
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V IH RAS CAS RAD t ASC t RAH t ASR V IH Address Row RCS DZC V IH ...
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V IH RAS RCD V IH CAS RAD t ASC t RAH t ASR V IH Address Row WCS I/O (Input ...
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Read Cycle V IH RAS CSR V IH CAS Address WRP I/O (Inputs I/O ...
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V IH RAS RPC CAS Address ODD I/O (Inputs OEZ ...
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Test Mode As the HYB 314400BJ is organized internally as 512k compression can be used to improve test time. Note that in the 1M reduced by 1/2 for a linear test pattern test mode “write” the data from ...
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Package Outlines Plastic Package, P-SOJ-26/20-2 (SMD) (Plastic small outline J-leaded) 30˚ 1.27 0.85 max 0.51 -0.1 15. ø 17.27 Index Marking Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data ...