CY62127DV18L-55BVI CYPRESS [Cypress Semiconductor], CY62127DV18L-55BVI Datasheet - Page 3

• Manufacturer Part Number: CY62127DV18L-55BVI
• Description: 1 Mb (64K x 16) Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential .−0.2V to V
DC Voltage Applied to Outputs
in High-Z State
Product Portfolio
DC Electrical Characteristics
Capacitance
Thermal Resistance
Notes:
Document #:38-05226 Rev.*A
CY62127DV18L
CY62127DV18LL
V
V
V
V
I
I
I
I
I
C
C
θ
θ
3.
4.
5.
IX
OZ
CC
SB1
SB2
Parameter
JA
JC
Parameter
OH
OL
IH
IL
IN
OUT
V
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
Tested initially and after any design or proces changes that may affect these parameters.
IL(min.)
Product
Parameter
= −1.0V for pulse durations less than 20 ns., V
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
[3]
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
rent
Automatic CE Power-down
Current − CMOS Inputs
Automatic CE Power-down
Current − CMOS Inputs
[5]
CC
....................................−0.2V to V
Operating Supply Cur-
Description
Min.
1.65
Description
V
CC
Input Capacitance
Output Capacitance
Range(V)
Typ.
1.8
Over the Operating Range
Description
Max.
I
I
GND < V
GND < V
f = f
f = 1 MHz
CE > V
V
f = f
f = 0 (OE, WE, BHE and BLE)
CE > V
V
f = 0, V
2.2
OH
OL
IN
IN
CCMAX
IH(max.)
= 0.1 mA
MAX
MAX
= −0.1 mA
> V
> V
PRELIMINARY
CC
CC
CC
CC
CC
CC
[5]
[5]
= Vcc+0.5V for pulse durations less than 20 ns.
(Address and Data Only),
= 1/t
+ 0.2V
+ 0.2V
I
O
Speed
=2.2V
< V
− 0.2V,
− 0.2V,
− 0.2V, V
− 0.2V or V
(ns)
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
< V
Test Conditions
55
55
RC
CC
CC
, Output Disabled
TA = 25°C, f = 1 MHz
V
IN
Typ.
CC
DC Input Voltage
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Vcc = 2.2V, I
0mA, CMOS level
0.5
0.5
IN
< 0.2V,
Test Conditions
f = 1 MHz
= V
< 0.2V,
[4]
Industrial
Test Conditions
Range
CC(typ)
Operating, Icc (mA)
Max.
1.5
1.5
OUT
LL
LL
L
L
=
[3]
................................ −0.2V to V
Power Dissipation
Temperature (T
−40°C to +85°C
Typ.
3.75
3.75
Min.
−0.2
1.4
1.4
−1
−1
Ambient
f = f
[4]
CY62127DV18-55
CC
MAX
= V
Max.
Typ.
CC(typ)
7.5
7.5
3.75
FBGA
CY62127DV18
0.5
0.5
0.5
0.5
0.5
Max.
55
12
A
8
8
[4]
, T
)
A
= 25°C.
Standby, I
V
Typ.
1.65V to 2.2V
CC
0.5
0.5
TSOP II
Max.
MoBL2
0.2
0.4
7.5
1.5
+1
+1
5
4
5
4
+ 0.2
[4]
76
11
V
Page 3 of 11
CC
CC
Unit
SB2
pF
pF
Max.
+ 0.2V
Unit
mA
µA
µA
µA
µA
°C/W
°C/W
5
4
V
V
V
V
Unit
(µA)
®