V62C1162048L-100B MOSEL [Mosel Vitelic, Corp], V62C1162048L-100B Datasheet

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V62C1162048L-100B

Manufacturer Part Number
V62C1162048L-100B
Description
Ultra Low Power 128K x 16 CMOS SRAM
Manufacturer
MOSEL [Mosel Vitelic, Corp]
Datasheet
REV. 1.2 May 2001 V62C1162048L(L)
Features
• Low-power consumption
• 70/85/100/120 ns access time
• Equal access and cycle time
• Single +1.8V to2.2V Power Supply
• Tri-state output
• Automatic power-down when deselected
• Multiple center power and ground pins for
• Individual byte controls for both Read and
• Available in 44 pin TSOPII / 48-fpBGA / 48- BGA
Logic Block Diagram
- Active: 35mA I
- Stand-by: 10 A (CMOS input/output)
improved noise immunity
Write cycles
BHE
BLE
WE
OE
CE
I/O9 - I/O16
I/O1 - I/O8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
2 A (CMOS input/output, L version)
CC
at 70ns
Data
Cont
Data
Cont
Memory Array
A10 A11 A12 A13 A14
Pre-Charge Circuit
1024 X 2048
Column Select
I/O Circuit
A15 A16
Vcc
Vss
1
Functional Description
The V62C1162048L is a Low Power CMOS Static
RAM organized as 131,072 words by 16 bits. Easy
Memory expansion is provided by an active LOW (CE)
and (OE) pin.
This device has an automatic power-down mode feature
when deselected. Separate Byte Enable controls (BLE
and BHE) allow individual bytes to be accessed. BLE
controls the lower bits I/O1 - I/O8. BHE controls the
upper bits I/O9 - I/O16.
Writing to these devices is performed by taking Chip
Enable (CE) with Write Enable (WE) and Byte Enable
(BLE/BHE) LOW.
Reading from the device is performed by taking Chip
Enable (CE) with Output Enable (OE) and Byte Enable
(BLE/BHE) LOW while Write Enable (WE ) is held
HIGH.
TSOPII / 48-fpBGA / 48- BGA
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
A16
A15
A14
A13
A12
WE
A4
A3
A2
A1
A0
CE
V62C1162048L(L)
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
Ultra Low Power
128K x 16 CMOS SRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
(See nest page)

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V62C1162048L-100B Summary of contents

Page 1

... BHE BLE CE REV. 1.2 May 2001 V62C1162048L(L) Functional Description The V62C1162048L is a Low Power CMOS Static RAM organized as 131,072 words by 16 bits. Easy Memory expansion is provided by an active LOW (CE) and (OE) pin. This device has an automatic power-down mode feature when deselected. Separate Byte Enable controls (BLE and BHE) allow individual bytes to be accessed ...

Page 2

... MOSEL VITELIC V62C1162048L(L Top View 48 Ball - BGA (Ultra Low Power REV. 1.2 May 2001 V62C1162048L( aaa SIDE VIEW BOTTOM VIEW SOLDER BALL 2 V62C1162048L( BLE OE A0 ...

Page 3

... Key Don’t Care Low High Recommended Operating Conditions Parameter Supply Voltage Input Voltage * V min = -2.0V for pulse width less than For Industrial Temperature REV. 1.2 May 2001 V62C1162048L(L) Symbol Vt PT Tstg Tbias BLE BHE I/O1-I/O8 I/O9-I/O16 X X High-Z High Data Out ...

Page 4

... AC Test Conditions Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level Output Load Condition 70ns/85ns Load for 100ns/120ns REV. 1.2 May 2001 V62C1162048L(L) (V =1.8 to 2.2V, Gnd = 0V Test Conditions Sym Min Max Min Max Min Max Min Max I ...

Page 5

... Write Pulse Width Write Recovery Time Data Valid to Write End Data Hold Time Write Enable to Output in High-Z Output Active from Write End BLE, BHE Setup to Write End REV. 1.2 May 2001 V62C1162048L(L) = 1.8 to 2.2V, Gnd = 0V Sym -70 Min Max Min Max Min Max Min Max ...

Page 6

... Transition is measured + 200mV from steady state voltage with load. This parameter is sampled and not 100% tested. 6. Device is continuously selected with Address valid prior to coincident with CE transition Low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 9. For test conditions, see AC Test Condition, Figure A. REV. 1.2 May 2001 V62C1162048L( ...

Page 7

... Address CE BLE/BHE WE Data In Data Out Timing Waveform of Write Cycle 2 (CE Controlled) Address CE BLE/BHE WE Data In Data Out Timing Waveform of Write Cycle 3 (BLE/BHE Controlled) Address CE BLE/BHE WE Data In Data Out REV. 1.2 May 2001 V62C1162048L( ( (4) High-Z t OHZ ( ...

Page 8

... OUT 10. When CE is low: I/O pins are in the outputs state. The input signals in the opposite phase leading to the output should not be applied. 11. For test conditions, see AC Test Condition, Figure A. REV. 1.2 May 2001 V62C1162048L(L) V62C1162048L( measured from the beginning WP ...

Page 9

... All read cycle timings are referenced from the last valid address to the first transtion address. 10 must be HIGH during address transition. 11. All write cycle timings are referenced from the last valid address to the first transition address. REV. 1.2 May 2001 V62C1162048L(L) (L Version Only) Symbol ...

Page 10

... V62C1162048L(L)-100B V62C1162048L(L)-120B V62C1162048L(L)-70M V62C1162048L(L)-85M V62C1162048L(L)-100M V62C1162048L(L)-120M * For Industrial temperature tested devices, an “I” designator will be added to the end of the device number. REV. 1.2 May 2001 V62C1162048L(L) Speed Package 70 ns 44-pin TSOP Type 100 ns 120 ...

Page 11

... If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. V62C1162048L(L) UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE ...

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