BGD812_01 NXP [NXP Semiconductors], BGD812_01 Datasheet - Page 3

• Manufacturer Part Number: BGD812_01
• Description: 860 MHz, 18.5 dB gain power doubler amplifier
• Manufacturer: NXP [NXP Semiconductors]

Philips Semiconductors
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
2001 Oct 30
G
SL
FL
s
s
s
CTB
X
SYMBOL
11
22
21
mod
860 MHz, 18.5 dB gain power doubler
amplifier
p
power gain
slope straight line
flatness straight line
input return losses
output return losses
phase response
composite triple beat
cross modulation
PARAMETER
B
= 24 V; T
f = 45 MHz
f = 870 MHz
f = 45 to 870 MHz; note 1
f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
f = 50 MHz
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
V
79 chs; f
V
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
V
79 chs; f
V
mb
o
o
o
o
= 50.2 dBmV at 745 MHz; note 2
= 47.3 dBmV at 547 MHz; note 3
= 50.2 dBmV at 745 MHz; note 2
= 47.3 dBmV at 547 MHz; note 3
= 35 C; Z
m
m
m
m
= 331.25 MHz;
= 331.25 MHz;
= 547.25 MHz;
= 745.25 MHz;
o
o
o
o
o
o
S
= 44 dBmV; f
= 44 dBmV; f
CONDITIONS
= 44 dBmV; f
= 44 dBmV; f
= 44 dBmV; f
= 44 dBmV; f
= Z
L
3
= 75
m
m
m
m
m
m
= 547.25 MHz
= 55.25 MHz
= 745.25 MHz
= 859.25 MHz
= 55.25 MHz
= 55.25 MHz
18.2
19
0.4
25
23
20
18
18
17
17
13
23
22
18
18
16
15
15
14
MIN.
0.3
45
0.9
TYP.
Product specification
18.8
20
1.4
+45
BGD812
MAX.
0.25
0.5
0.1
66.5
61
57
56
66
67
64
62
59
67
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
UNIT