BGD812,112 NXP Semiconductors, BGD812,112 Datasheet

AMP GAIN POWER 860MHZ SOT115J

BGD812,112

Manufacturer Part Number
BGD812,112
Description
AMP GAIN POWER 860MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGD812,112

Operating Frequency
870 MHz
Operating Supply Voltage
24 V
Supply Current
410 mA
Mounting Style
SMD/SMT
Package / Case
SOT-115
Number Of Channels
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055918112::BGD812::BGD812
Product specification
Supersedes data of 2001 Sep 07
book, halfpage
DATA SHEET
BGD812
860 MHz, 18.5 dB gain power
doubler amplifier
DISCRETE SEMICONDUCTORS
M3D252
2001 Oct 30

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BGD812,112 Summary of contents

Page 1

DATA SHEET book, halfpage BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 DISCRETE SEMICONDUCTORS M3D252 2001 Oct 30 ...

Page 2

... NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Silicon nitride passivation  Rugged construction  Gold metallization ensures excellent reliability. APPLICATIONS  CATV systems operating in the 40 to 870 MHz frequency range ...

Page 3

... NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier CHARACTERISTICS Bandwidth 40 to 870 MHz SYMBOL PARAMETER G power gain p SL slope straight line FL flatness straight line s input return losses 11 s output return losses 22 s phase response 21 CTB composite triple beat X cross modulation ...

Page 4

... NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier SYMBOL PARAMETER CSO composite second order distortion d second order distortion 2 V output voltage o NF noise figure I total current tot consumption (DC) Notes 1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz. ...

Page 5

... NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier −50 handbook, halfpage CTB (dB) −60 −70 −80 −90 0 200 400 600 = 75  chs; tilt = 7.3 dB (50 to 550 MHz ( (3) Typ. o Typ. +3 . (4) Typ. 3 . (2) Fig.2 Composite triple beat as a function of frequency under tilted conditions. ...

Page 6

... NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier −40 handbook, halfpage CTB (dB) −50 −60 −70 −80 0 200 400 = 75  112 chs; tilt = 10.3 dB (50 to 750 MHz ( (3) Typ. o Typ. +3 . (4) Typ. 3 . (2) Fig.5 Composite triple beat as a function of frequency under tilted conditions. ...

Page 7

... NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads DIMENSIONS (mm are the original dimensions UNIT b c max. max. max. 0.51 mm 20.8 9 ...

Page 8

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 9

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 10

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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