LT5568-2EUF-PBF LINER [Linear Technology], LT5568-2EUF-PBF Datasheet - Page 3

• Manufacturer Part Number: LT5568-2EUF-PBF
• Description: GSM/EDGE Optimized, High Linearity Direct Quadrature Modulator
• Manufacturer: LINER [Linear Technology]

ELECTRICAL CHARACTERISTICS
BBPI, BBMI, BBPQ, BBMQ inputs 0.54V
P
SYMBOL
IR
LOFT
LO Input (LO)
f
P
S
S
NF
G
IIP3
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BW
V
R
P
IP1dB
Power Supply (V
V
I
I
t
t
Enable (EN), Low = Off, High = On
Enable
Sleep
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifi cations over the –40°C to 85°C temperature range are assured
by design, characterization and correlation with statistical process controls.
Note 3: Tests are performed as shown in the confi guration of Figure 7.
Note 4: On each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: V(BBPI) – V(BBMI) = 1V
Note 6: Maximum value within 850MHz to 965MHz.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
LO
CC, ON
CC, OFF
ON
OFF
LO
11, ON
11, OFF
CMBB
LO2BB
CC
RF, OUT
LO
IN, SE
LO
BB
LO
= –10dBm, unless otherwise noted. (Note 3)
CC
PARAMETER
Image Rejection
Carrier Leakage
(LO Feedthrough)
LO Frequency Range
LO Input Power
LO Input Return Loss
LO Input Return Loss
LO Input Referred Noise Figure
LO to RF Small Signal Gain
LO Input 3rd Order Intercept
Baseband Bandwidth
DC Common Mode Voltage
Single-Ended Input Resistance
Carrier Feedthrough on BB
Input 1dB Compression Point
Supply Voltage
Supply Current
Supply Current, Sleep Mode
Turn-On Time
Turn-Off Time
Input High Voltage
Input High Current
Input Low Voltage
Input Low Current
)
DC
, V(BBPQ) – V(BBMQ) = 1V
DC
, Baseband Input Frequency = 2MHz, I&Q 90° shifted (upper side-band selection).
DC
CONDITIONS
f
EN = High, P
EN = Low, P
EN = High (Note 6)
EN = Low (Note 6)
(Note 5) at 900MHz
(Note 5) at 900MHz
(Note 5) at 900MHz
–3dB Bandwidth
(Note 4)
(Note 4)
P
Differential Peak-to-Peak (Notes 7, 18)
EN = High
EN = 0V
EN = Low to High (Note 11)
EN = High to Low (Note 12)
EN = High
EN = 5V
EN = Low
EN = 0V
.
BB
OUT
V
= 100kHz (Note 16)
CC
= 0 (Note 4)
= 5V, EN = High, T
LO
LO
= 0dBm (Note 16)
= 0dBm (Note 16)
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of fi nal value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz.
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
Note 18: The input voltage corresponding to the output P1dB.
A
= 25°C, f
LO
= 900MHz, f
MIN
–10
4.5
1.0
80
RF
0.6 to 1.1
–2.5
14.7
14.7
0.54
0.01
TYP
–52
–43
–65
–15
–38
380
110
245
4.3
0.3
1.4
= 902MHz, P
–3
47
0
5
LT5568-2
MAX
5.25
145
100
0.5
5
LO
= 0dBm.
V
P-P, DIFF
UNITS
55682f
3
dBm
dBm
dBm
dBm
dBm
MHz
GHz
dBc
mA
µA
µA
dB
dB
dB
dB
µA
µs
µs
Ω
V
V
V
V