STA333BW_11 STMICROELECTRONICS [STMicroelectronics], STA333BW_11 Datasheet - Page 13

• Manufacturer Part Number: STA333BW_11
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STA333BW
3.5
Table 7.
1. Limit the current if overcurrent warning detect adjustment bypass is enabled (register bit CONFC.OCRB
Po
R
gP
gN
Idss
t
t
I
I
I
I
V
t
DR
SNR
THD+N
X
η
r
f
VCC
VDD
LIM
SCP
min
Symbol
UVP
TALK
dsON
page
28). When disabled refer to the I
Output power BTL
Output power SE
Power P-channel or N-channel MOSFET
Power P-channel R
Power N-channel R
Power P-channel / N-channel leakage
Rise time
Fall time
Supply current from V
Supply current from V
Supply current FFX processing
Overcurrent limit
Short -circuit protection
Undervoltage protection
Output minimum pulse width
Dynamic range
Signal to noise ratio, ternary mode
Signal to noise ratio binary mode
Total harmonic distortion + noise
Crosstalk
Peak efficiency, FFX mode
Peak efficiency, binary modes
Electrical specifications for the power section
The specifications given in this section are valid for the operating conditions: V
f = 1 kHz, f
Electrical specifications - power section
sw
Parameter
= 384 kHz, T
dsON
dsON
CC
CC
matching
matching
in power down
in operation
SCP
amb
.
Doc ID 13773 Rev 3
= 25 °C and R
THD = 1%
THD = 10%
THD = 1%, R
THD = 10%, R
l
l
l
V
Resistive load,
see
PWRDN = 0
PWRDN = 1
Internal clock =
49.152 MHz
(1)
R
-
No load
-
A-Weighted
-
FFX stereo mode,
Po = 1 W
f = 1 kHz
FFX stereo mode,
<5 kHz
One channel driven
at 1 W, other channel
measured
Po = 2 x 20 W
into 8 Ω
Po = 2 x 9 W into 4 Ω
+ 1 x 20 W into 8 Ω
d
d
d
CC
L
= 0.75 A
= 0.75 A
= 0.75 A
= 0 Ω
Figure 3
Conditions
= 20 V
L
= 8 Ω, unless otherwise specified.
below
L
= 4 Ω
L
= 4 Ω -
-
-
-
-
-
-
-
-
-
-
-
-
2.2
2.7
-
20
-
-
-
-
-
-
-
Min
Electrical specifications
16
20
7
9
-
100
100
-
-
-
0.3
15
55
3.0
3.6
-
40
100
100
90
0.2
80
90
87
Typ
-
-
-
-
250
-
-
1
10
10
-
-
-
-
-
4.3
60
-
-
-
-
-
-
-
Max
CC
= 18 V,
W
W
mΩ
%
%
µA
ns
ns
µA
mA
mA
A
A
V
ns
dB
dB
dB
%
dB
%
on
Unit
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