MC68HC908GT16_07 FREESCALE [Freescale Semiconductor, Inc], MC68HC908GT16_07 Datasheet - Page 41

• Manufacturer Part Number: MC68HC908GT16_07
• Description: Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2.6.2 Flash Control Register
The Flash control register (FLCR) controls Flash program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
2.6.3 Flash Page Erase Operation
Use the following procedure to erase a page (64 bytes) of Flash memory. A page consists of 64
consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 36-byte user interrupt
vectors area also forms a page. Any Flash memory page can be erased alone.
Freescale Semiconductor
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16Kbyte Flash array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
Reset:
Read:
Write:
MC68HC908GT16 • MC68HC908GT8 • MC68HC08GT16 Data Sheet, Rev. 5.0
$FE08
Bit 7
0
0
Figure 2-3. Flash Control Register (FLCR)
= Unimplemented
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
PGM
Bit 0
0
Flash Memory
41