KM681000 SAMSUNG [Samsung semiconductor], KM681000 Datasheet - Page 6

• Manufacturer Part Number: KM681000
• Description: 128K x8 bit Low Power CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

KM681000B Family
DATA RETENTION TIMING DIAGRAM
1) CS
V
4.5V
2.2V
V
CS
GND
2) CS
4.5V
DATA RETENTION CHARACTERISTICS
* 1) Commercial Product : T
** T
*** CS
V
CS
V
0.4V
GND
CC
DR
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
2) Extended Product : T
2) Industrial Product : T
CC
DR
A
1
2
=25 ¡É
1
¡Ã V
1
2
Controlled
controlled
CC
-0.2V,CS
Item
2
¡Ã V
A
A
=-40 to 85 ¡É , unless otherwise specified
=-25 to 85 ¡É , unless otherwise specified
CC
A
=0 to 70 ¡É , unless otherwise specified
-0.2V(CS
1
controlled) or CS
V
I
t
t
DR
RDR
RDR
DR
KM681000BL
KM681000BL-L
KM681000BLE
KM681000BLE-L
KM681000BLI
KM681000BLI-L
t
SDR
t
SDR
Symbol
2
¡Â 0.2V(CS
2
controlled)
CS
Data Retention Mode
CS
Vcc=3.0V
CS
See data retention waveform
Data Retention Mode
1
¡Ã V
1
1
*** ¡Ã Vcc-0.2V
¡Ã Vcc-0.2V
CS
Test Condition*
CC
2
¡Â
- 0.2V
0.2V
L-Ver
LL-Ver
L-Ver
LL-Ver
L-Ver
LL-Ver
Min
2.0
t
0
5
RDR
-
-
-
-
-
-
t
RDR
Typ**
PRELIMINARY
0.5
1
-
-
-
-
-
-
-
CMOS SRAM
Max
5.5
50
10
50
25
50
25
-
-
Revision 0.3
April 1996
Unit
ms
§Ë
V