CY8C38_1105 CYPRESS [Cypress Semiconductor], CY8C38_1105 Datasheet - Page 106
![no-image](/images/no-image-200.jpg)
CY8C38_1105
Manufacturer Part Number
CY8C38_1105
Description
Programmable System-on-Chip (PSoC) Multiply and divide instructions
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
1.CY8C38_1105.pdf
(130 pages)
- Current page: 106 of 130
- Download datasheet (5Mb)
11.7.2 EEPROM
Table 11-60. EEPROM DC Specifications
Table 11-61. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-62. NVL DC Specifications
Table 11-63. NVL AC Specifications
11.7.4 SRAM
Table 11-64. SRAM DC Specifications
Table 11-65. SRAM AC Specifications
Document Number: 001-11729 Rev. *S
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Erase and program voltage
Single row erase/write cycle time
EEPROM data retention time,
retention period measured from last
erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Description
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
V
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp. T
10 K erase/program cycles
DDD
pin
Conditions
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
A
≤ 25 °C,
≤ 55 °C,
≤ 85 °C,
1.71
Min
1.71
Min
Min
Min
100
Min
Min
DC
1.2
1K
20
20
20
20
10
–
PSoC
Typ
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
2
–
–
–
®
3: CY8C38 Family
67.01
Max
Max
Max
Max
Max
Max
5.5
5.5
20
–
–
–
–
–
–
–
–
program/erase cycles
program/erase cycles
Data Sheet
Page 106 of 130
Units
Units
Units
years
Units
years
years
Units
Units
MHz
ms
V
V
V
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