CY7C1518AV18 CYPRESS [Cypress Semiconductor], CY7C1518AV18 Datasheet - Page 19

• Manufacturer Part Number: CY7C1518AV18
• Description: 72-Mbit DDR-II SRAM Two-Word Burst Architecture
• Manufacturer: CYPRESS [Cypress Semiconductor]

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC applied to outputs in high Z ........–0.5 V to V
DC input voltage
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage (MIL-STD-883, M 3015) .. > 2001 V
Latch-up current ................................................... > 200 mA
Operating Range
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-06982 Rev. *I
V
V
V
V
V
V
V
V
I
I
V
17. Overshoot: V
18. Power-up: assumes a linear ramp from 0 V to V
19. All voltage referenced to ground.
20. Outputs are impedance controlled. I
21. Outputs are impedance controlled. I
22. V
Commercial
Industrial
X
OZ
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
Range
REF
(min) = 0.68 V or 0.46 V
IH
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
Input reference voltage
(AC) < V
[17]
Temperature (T
–40 °C to +85 °C
0 °C to +70 °C
DD
DDQ
........................... –0.5 V to V
Ambient
DDQ
Description
relative to GND .......–0.5 V to +2.9 V
relative to GND ...... –0.5 V to +V
+ 0.85 V (Pulse width less than t
DDQ
[19]
, whichever is larger, V
OH
OL
A
= (V
= –(V
)
DDQ
[22]
DDQ
1.8 ± 0.1 V
/2)/(RQ/5) for values of 175  < RQ < 350 
V
DD
/2)/(RQ/5) for values of 175  < RQ < 350 
DD
(min) within 200 ms. During this time V
Note 20
Note 21
I
I
GND  V
GND  V
Typical value = 0.75 V
[18]
OH
OL
REF
= 0.1 mA, nominal impedance
=0.1 mA, nominal impedance
DDQ
(max) = 0.95 V or 0.54 V
DD
CYC
V
1.4 V to
+ 0.3 V
+ 0.3 V
I
I
DDQ
/2), Undershoot: V
V
 V
 V
DD
Test Conditions
DD
[18]
DDQ
DDQ,
output disabled
Neutron Soft Error Immunity
IL
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 
Application Note,
Failure Rates – AN54908
(AC) >
DDQ
Parameter
, whichever is smaller.
IH
< V

1.5 V (Pulse width less than t
DD
2
, 95% confidence limit calculation. For more details refer to
and V
Accelerated Neutron SER Testing and Calculation of Terrestrial
Description
Single event
DDQ
single-bit
latch-up
multi-bit
Logical
Logical
upsets
upsets
V
V
< V
DDQ
DDQ
V
V
DDQ
REF
DD
–0.3
0.68
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
.
5
5
SS
+ 0.1
– 0.2
Conditions Typ Max*
CYC
25 °C
25 °C
85 °C
Test
/2).
0.75
Typ
1.8
1.5
–
–
–
–
–
–
–
–
CY7C1518AV18
CY7C1520AV18
V
V
DDQ
DDQ
V
V
320
DDQ
REF
0
0
V
Max
0.95
V
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 19 of 29
0.01
368
0.1
Unit
FIT/
FIT/
FIT/
Dev
Unit
Mb
Mb
A
A
V
V
V
V
V
V
V
V
V
[+] Feedback