CAT25M01 ONSEMI [ON Semiconductor], CAT25M01 Datasheet - Page 2

• Manufacturer Part Number: CAT25M01
• Description: 1 Mb SPI Serial CMOS EEPROM
• Manufacturer: ONSEMI [ON Semiconductor]

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D. C. OPERATING CHARACTERISTICS
(V
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Symbol
N
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
V
V
I
V
V
CC
I
V
V
END
I
I
V
V
CCW
CCR
I
SB1
SB2
OH1
OH2
OL1
OL2
I
LO
IH1
IH2
Symbol
IL1
IL2
L
= 1.8 V to 5.5 V, T
T
(Note 3)
DR
Input Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Output Low Voltage
Input High Voltage
Input High Voltage
CC
Input Low Voltage
Input Low Voltage
Standby Current
Standby Current
Output Leakage
Supply Current
Supply Current
(Read Mode)
(Write Mode)
= 5 V, 25°C
Parameter
Endurance
Data Retention
Current
A
= −40°C to +85°C and V
Parameter
Parameter
Read, SO open /
−40°C to +85°C
Read, SO open /
−40°C to +125°C
Write, CS = V
−40°C to +85°C
Write, CS = V
−40°C to +125°C
V
CS = V
HOLD = V
V
V
CS = V
HOLD = GND,
V
V
CS = V
V
IN
CC
IN
CC
IN
OUT
= GND or V
= GND or V
= GND or V
= 5.5 V
= 5.5 V
= GND or V
CC
CC
CC
CC
, WP = V
, WP = GND,
CC
(Note 2)
= 2.5 V to 5.5 V, T
,
CC
CC
V
V
V
V
CC
CC
CC
CC
CC
http://onsemi.com
/
/
CC
CC
CC
,
,
< 2.5 V, I
CC
≥ 2.5 V, I
Test Conditions
≥ 2.5 V, I
< 2.5 V, I
,
V
V
V
V
CC
CC
CC
CC
CC
≥ 2.5 V
≥ 2.5 V
< 2.5 V
< 2.5 V
2
V
OH
OH
V
V
OL
OL
CC
CC
+ 1.5 V, for periods of less than 20 ns.
CC
A
T
T
= −1.6 mA
= −100 mA
2.5 V < V
T
T
= 3.0 mA
= 150 mA
1.8 V < V
2.5 V < V
= −40°C to +125°C, unless otherwise specified)
A
A
= 2.5 V, f
= 5.5 V, f
A
A
= 1.8 V, f
= −40°C to +125°C
= −40°C to +125°C
f
= −40°C to +85°C
= −40°C to +85°C
SCK
1,000,000
= 10 MHz
−45 to +130
−65 to +150
−0.5 to +6.5
CC
CC
Min
100
CC
CC
SCK
SCK
Ratings
SCK
< 5.5 V,
+ 0.5 V. During transitions, the voltage on any pin may
< 5.5 V
< 5.5 V
= 10 MHz
= 10 MHz
= 5 MHz
V
V
0.75V
CC
CC
0.7V
−0.5
−0.5
Min
−2
−2
− 0.8V
− 0.2V
Program / Erase Cycles
CC
CC
Units
Years
V
V
0.25V
0.3V
CC
CC
Units
Max
1.2
1.8
0.4
0.2
°C
°C
V
3
3
3
3
1
3
3
5
2
2
+ 0.5
+ 0.5
CC
CC
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V