AP15P10GH A-POWER [Advanced Power Electronics Corp.], AP15P10GH Datasheet - Page 2

• Manufacturer Part Number: AP15P10GH
• Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP15P10GH/J
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
j
=25
=150
=25
o
C)
o
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=-100A/µs
D
D
S
S
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=-9A, V
=-9A, V
=-9A
=-9A
=10Ω,V
=5.6Ω
=0V, I
=-10V, I
=V
=-10V, I
=-100V, V
=-80V, V
= ±20V
=-80V
=-10V
=-50V
=0V
=-25V
GS
Test Conditions
Test Conditions
, I
GS
GS
D
D
=-1mA
GS
=0V
=0V,
=-250uA
D
D
GS
=-9A
=-9A
=-10V
GS
=0V
=0V
D
=-1mA
-100
Min.
Min.
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1180 1900
Typ.
Typ.
-0.1
250
410
3.6
37
15
11
25
56
36
75
95
8
5
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
-100
-1.3
210
-25
60
-3
5
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
uA
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
Ω
ns
V
V
S
V
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