AP13P15GH A-POWER [Advanced Power Electronics Corp.], AP13P15GH Datasheet - Page 3

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AP13P15GH

Manufacturer Part Number
AP13P15GH
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet
1400
1000
600
200
25
20
15
10
5
0
6
4
2
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
0.2
-V
T
-V
-V
Reverse Diode
o
5
j
SD
=150
C
DS
GS
4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.4
o
C
10
0.6
6
15
0.8
T
I
T
D
C
j
8
V
= -7 A
=25 ℃ ℃ ℃ ℃
=25
G
20
= - 3 .0V
1
o
-5.0V
-4.5V
-7.0V
C
-10V
1.2
10
25
1.5
1.1
0.7
0.3
2.3
1.8
1.3
0.8
0.3
25
20
15
10
5
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
I
T
D
G
C
=- 7 A
=-10V
= 1 5 0
Junction Temperature
v.s. Junction Temperature
-V
T
5
T
j
DS
0
0
, Junction Temperature (
j
o
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
10
50
50
AP13P15GH/J
15
V
100
100
o
G
C)
o
20
C)
= - 3 .0V
-5.0V
-4.5V
-7.0V
-10V
150
25
150
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