AP4800AGM_07 A-POWER [Advanced Power Electronics Corp.], AP4800AGM_07 Datasheet - Page 3

• Manufacturer Part Number: AP4800AGM_07
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

40
30
20
10
18
16
14
12
10
10
0
8
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
0.2
V
SD
Reverse Diode
DS
V
, Source-to-Drain Voltage (V)
1
4
GS
T
, Drain-to-Source Voltage (V)
j
T
=150
, Gate-to-Source Voltage (V)
0.4
A
=25
o
C
o
C
0.6
2
6
T
I
A
D
=25
= 7 A
0.8
℃
T
3
8
j
V
=25
G
1
= 3.0 V
o
7.0 V
5.0 V
4.5 V
C
10V
1.2
4
10
1.4
1.2
1.0
0.8
0.6
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
= 9 A
=10V
v.s. Junction Temperature
Junction Temperature
T
V
T
j
DS
1
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
A
= 150
50
2
50
o
C
AP4800AGM
100
o
100
3
C)
V
o
C)
G
= 3.0 V
7.0 V
5.0 V
4.5 V
10V
150
150
4
3