CY7C1355C-100AXI CYPRESS [Cypress Semiconductor], CY7C1355C-100AXI Datasheet - Page 28

• Manufacturer Part Number: CY7C1355C-100AXI
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05539 Rev. *E
Document History Page
Document Title: CY7C1355C/CY7C1357C 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture
Document Number: 38-05539
REV.
*A
*B
*C
*D
*E
**
ECN NO.
242032
332059
351895
377095
408298
501793
Issue Date
See ECN
See ECN
See ECN
See ECN
See ECN
See ECN
Change
Orig. of
RXU
RKF
VKN
PCI
PCI
PCI
New data sheet
Changed Boundary Scan Order to match the B rev of these devices
Removed description on Extest Output Bus Tri-state
Removed 117 MHz Speed Bin
Changed I
Changed I
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Modified V
Corrected I
or V
Changed Θ
6.13 °C/W
respectively
Changed Θ
°C/W
respectively
Changed Θ
°C/W respectively
Added lead-free information for 100-pin TQFP, 119 BGA and 165 FBGA
Packages
Updated Ordering Information Table
Changed from Preliminary to Final
Changed I
Updated Ordering Information Table
Modified test condition in note# 14 from V
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table
Changed three-state to tri-state
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
Added the Maximum Rating for Supply Voltage on V
Changed t
Switching Characteristics table.
Updated the Ordering Information table.
IN
≤ V
IL
) in the Electrical Characteristic Table on Pg #18
DDZZ
SB1
SB2
TH
OL,
SB4
JA
JA
JA
, t
and Θ
and Θ
V
and Θ
and I
from 30 to 40 mA
TL
Test Condition from (V
OH
from 35 mA to 50 mA on Pg # 9
from 25 ns to 20 ns and t
test conditions
SB3
Jc
Jc
Jc
for FBGA Package from 27 and 6 °C/W to 16.8 and 3.0
for BGA Package from 25 and 6 °C/W to 34.1 and 14.0
for TQFP Package from 25 and 9 °C/W to 29.41 and
from 40 mA to 110 and 100 mA respectively
Description of Change
IN
≥ V
IH
TDOV
DD
< V
– 0.3V or V
from 5 ns to 10 ns in TAP AC
DD
to V
DDQ
IH
IN
CY7C1355C
CY7C1357C
< V
Relative to GND
≤ 0.3V) to (V
DD
Page 28 of 28
IN
≥ V
IH
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