M29F002BT STMICROELECTRONICS [STMicroelectronics], M29F002BT Datasheet

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M29F002BT

Manufacturer Part Number
M29F002BT
Description
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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M29F002BT, M29F002BNT
M29F002BB, M29F002BNB
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45 ns
PROGRAMMING TIME
– 8 µs by Byte typical
7 MEMORY BLOCKS
PLCC32 (K)
TSOP32 (N)
– 1 Boot Block (Top or Bottom Location)
8 x 20mm
– 2 Parameter and 4 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
32
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
1
PDIP32 (P)
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
Figure 1. Logic Diagram
MODE
LOW POWER CONSUMPTION
V CC
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
18
8
20 YEARS DATA RETENTION
A0-A17
DQ0-DQ7
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
W
M29F002BT
– Manufacturer Code: 20h
M29F002BB
E
M29F002BNT
– Top Device Code M29F002BT: B0h
G
M29F002BNB
– Top Device Code M29F002BNT: B0h
RP
– Bottom Device Code M29F002BB: 34h
– Bottom Device Code M29F002BNB: 34h
V SS
AI02957B
April 2002
1/22

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M29F002BT Summary of contents

Page 1

... BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29F002BT: B0h – Top Device Code M29F002BNT: B0h – Bottom Device Code M29F002BB: 34h – Bottom Device Code M29F002BNB: 34h April 2002 M29F002BT, M29F002BNT ...

Page 2

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Figure 2. PLCC Connections M29F002BT A3 9 M29F002BB A2 M29F002BNB A1 A0 DQ0 17 Figure 4. PDIP Connections RP 1 A16 2 A15 3 A12 M29F002BT A5 7 M29F002BB A4 8 M29F002BNT DQ0 DQ1 14 DQ2 2/22 Figure 3. TSOP Connections ...

Page 3

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB (1) Parameter of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically ar- ranged, see Tables 3A and 3B, Block Addresses. ...

Page 4

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A17). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the internal state machine ...

Page 5

... V IL Note M29F002BT, M29F002BB, M29F002BNT, M29F002BNB When Chip Enable reduced to the TTL Standby Supply Current further reduce the Supply Current to the CMOS Standby Supply Current held within V levels see Table 11, DC Characteristics. During program or erase operations the memory ...

Page 6

... The Device Code can be read using a Bus Read operation with and address bits may be set to either V Device Code for the M29F002BT is B0h, the M29F002BNT is B0h and the M29F002BB is 34h. The Block Protection Status of each block can be read using a Bus Read operation with ...

Page 7

... If all of the blocks are protected the Chip Erase operation ap- pears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Bus Write Operations 1st 2nd 3rd ...

Page 8

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Block Erase Command. The Block Erase com- mand can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50µ ...

Page 9

... Good Block Address Erase Error Faulty Block Address Note: Unspecified data bits should be ignored. M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Toggle Bit (DQ6). The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation has re- sponded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read ...

Page 10

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Figure 5. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com- mand ...

Page 11

... Table 10. Capacitance ( ° MHz) A Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: Sampled only, not 100% tested. M29F002BT, M29F002BB, M29F002BNT, M29F002BNB High Speed 30pF 10ns 1.5V Figure 8. AC Testing Load Circuit 1.5V DEVICE UNDER TEST 2.0V 0.8V AI01275B C L includes JIG capacitance ...

Page 12

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Table 11. DC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) A Symbol Parameter (1) Input Leakage Current Leakage Current High LR1 I RP Leakage Current Low LR2 I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL ...

Page 13

... Chip Enable, Output Enable or EHQX t t Address Transition to Output GHQX OH Transition t AXQX Note: 1. Sampled only, not 100% tested. Figure 9. Read Mode AC Waveforms A0-A17 E G DQ0-DQ7 M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Parameter Test Condition ...

Page 14

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Table 13. Write AC Characteristics, Write Enable Controlled ( 70°C, –40 to 85°C or –40 to 125°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL Write Enable Low to Write Enable High ...

Page 15

... Chip Enable High to Output Enable Low EHGL OEH High to Write Enable Low VCHWL VCS CC Figure 11. Write AC Waveforms, Chip Enable Controlled A0-A17 DQ0-DQ7 V CC tVCHWL M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Parameter tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH M29F002B 120 Min Min ...

Page 16

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Table 15. Reset/Block Temporary Unprotect AC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH Low, Output Enable Low (1) t PHGL Pulse Width PLPX RP (1) ...

Page 17

... For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de- vice, please contact the ST Sales Office nearest to you. M29F002BT, M29F002BB, M29F002BNT, M29F002BNB M29F002BB 45 ...

Page 18

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Table 17. Revision History Date Rev. July 1999 -01 First Issue Chip Erase Max. specification added (Table 7) Block Erase Max. specification added (Table 7) Program Max. specification added (Table 7) 07-Oct-1999 -02 Chip Program Max. specification added (Table 7) I and I CC1 I Test Condition changed (Table 11) ...

Page 19

... Note: Drawing is not to scale. PLCC32 – 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data Symbol Typ 7. 10. 0.89 M29F002BT, M29F002BB, M29F002BNT, M29F002BNB 0.51 (.020) 1.14 (.045 millimeters Min Max 3.18 3.56 1.53 2.41 0.38 – 0.33 0.53 0.66 0.81 0.10 12.32 12.57 11.35 11.51 4.78 5.66 – – ...

Page 20

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB TSOP32 – 32 lead Plastic Thin Small Outline 20mm, Package Outline TSOP-a Note: Drawing is not to scale. TSOP32 – 32 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ 0. 20/ ...

Page 21

... B1 Note: 1. Drawing is not to scale. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Mechanical Data Symb. Typ 1. 38.10 E 15. 2.54 eA 15. M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Min. Max. – 5.08 0.38 – 3.56 4.06 0.38 0.51 – – ...

Page 22

... M29F002BT, M29F002BB, M29F002BNT, M29F002BNB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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