SL3145CMP Zarlink Semiconductor Inc, SL3145CMP Datasheet - Page 3

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SL3145CMP

Manufacturer Part Number
SL3145CMP
Description
1.6GHz NPN TRANSISTOR ARRAYS
Manufacturer
Zarlink Semiconductor Inc
Datasheet
SL3145
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
which operating life may be shortened or specified parameters
may be degraded.
ratings apply to the total package.
negative voltage applied to the package to maintain electrical
isolation.
V
V
V
V
I
C
Static characteristic
Collector base breakdown
Collector emitter breakdown
Collector substrate breakdown (isolation)
Base to isolation breakdown
Base emitter voltage
Collector emitter saturation voltage
Emitter base leakage current
Base emitter saturation voltage
Base emitter voltage difference,
all transistors expect TR1, TR2
Base emitter voltage difference
TR1, TR2
Input offset current
(except for TR1, TR2)
Input offset current TR1, TR2
Temperature coefficient of V
Temperature coefficiient of V
Static forward current ratio
Collector base leakage
Collector isolation leakage
Base isolation leakage
Emitter base capacitance
Collector base capacitance
SL3145
Collector isolation capacitance
Dynamic characteristics
Transition frequency
SL3145
Wideband noise figure
Knee of 1/f noise curve
CB
EB
CE
CI
The absolute maximum ratings are limiting values above
All electrical ratings apply to individual transistors. Thermal
The isolation pin (substrate) must be connected to the most
= 20 mA
These characteristics are guaranteed over the following test conditions (unless otherwise stated)
= 20 volt
= 4.0 volt
= 15 volt
= 20 volt
T
amb
= 22 C
Characteristic
2 C
BE
BE
V
V
Symbol
CE
BE
BV
LV
BV
BV
I
I
V
H
C
C
I
I
C
NF
CBO
EBO
(SAT)
V
(SAT)
V
V
CIO
BIO
f
V
CEO
BE
EB
CB
CBO
I
I
T
T
FE
T
CI
CIO
BIO
BE
BE
BE
B
B
BE
0.64
Min.
20
15
20
10
40
Maximum individual transistor dissipation 200 mWatt
Storage temperature -55 C to 150 C
Max junction temperature 150 C
Package thermal resistance ( C/watt):-
Package Type
Chip to case
Chip to ambient
NOTE:
If all the power is being dissipated in one transistor, these
thermal resistance figures should be increased by 100 C/watt
Value
Typ.
0.74
0.26
0.95
0.45
0.35
-1.6
100
100
0.1
0.2
0.2
2.0
0.3
0.6
0.4
0.4
0.8
1.6
3.0
30
18
55
20
1
Max.
0.84
0.5
1
5
5
3
2
mV/ C
Units
GHz
KHz
mV
mV
V/ C
nA
nA
nA
pF
pF
pF
dB
V
V
V
V
V
V
V
MP14
45 C/W
123 C/W
A
A
A
I
I
I
I
V
I
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
I
C
C
C
B
C
C
C
C
CE
EB
CE
CE
CE
CE
CE
CE
CB
CI
BI
EB
CB
CI
CE
CE
CE
= 10 A, I
= 10 A, I
= 1mA, I
= 10 A, I
= 10mA, I
= 10mA, I
= 100 A, f = 60MHz
= 2mA
= 20V
= 5V
= 0V
= 6V, I
= 4V
= 6V, I
= 6V, I
= 6V, I
= 6V, I
= 6V, I
= 6V, I
= 16V
= 0V
= 0V
= 6V, I
= 2V, R
= 6V, R
Conditions
B
C
C
C
C
C
C
C
C
E
R
C
S
S
B
B
= 0
= 1mA
= 1mA
= 1mA
= 1mA
= 1mA
= 1mA
= 1mA
= 5mA
= 0
= I
= I
= 1k
= 200
= 1mA
= 1mA
E
E
= 0
= 0

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