CHA3092-99F/00 UMS [United Monolithic Semiconductors], CHA3092-99F/00 Datasheet

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CHA3092-99F/00

Manufacturer Part Number
CHA3092-99F/00
Description
20-33GHz Medium Power Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number
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Part Number:
CHA3092-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA3092 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage
that is representative of the microwave output
power.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances : 20-33GHz
■ 20dBm output power.
■ 22dB 1.0dB gain
■ Very good broadband input matching
■ On chip output power level DC detector
■ Low DC power consumption, 300mA @ 3.5V
■ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Id_
Ref. :DSCHA30920356 21-Dec.-00
Symbol
small signal
Fop
P03
G
to
0.88 X 1.72 X 0.10 mm
20-33GHz Medium Power Amplifier
commercial
Operating frequency range
Small signal gain
Output power at 3dB gain compression
Bias current
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
communication
Parameter
1/7
IN
Input Rloss : solid line & output Rloss : dash line.
Vg1
Specifications subject to change without notice
Typical on wafer measurements :
Vd1
Vg2
Min
20
20
20
Typ
300
22
23
CHA3092
Vg3,4
Vd2,3,4
Max
400
33
Vdet
DI
Unit
dBm
GHz
mA
dB
OUT

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CHA3092-99F/00 Summary of contents

Page 1

... Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092 is a high gain broadband four- stage monolithic medium power amplifier designed for a wide range of applications, from military to commercial systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process ...

Page 2

... Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) 3.5V recommended for max of 3dB gain compression. (3) Duration < 1s. Ref. : DSCHA30920356 21-Dec.-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-33GHz Medium Power Amplifier ...

Page 3

... Ref. : DSCHA30920356 21-Dec.-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S12 S12 S21 dB ° dB -62.3 -143 4.8 -62.8 137 9 -78.5 -31 13 -59.9 157.3 16.5 -62.4 126.9 19.1 -65.1 -160.1 21.1 -64.3 157.5 22 ...

Page 4

... Test conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt. 2- Power measurements are typical ( solid lines ). P.A.E. is representative of on wafer measurements on a typical circuit ( Dotted lines ). Ref. : DSCHA30920356 21-Dec.-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-33GHz Medium Power Amplifier ...

Page 5

... Id rather than at fixed Vg voltage. In addition, to prevent unwanted self-biasing of the gates under gain compression preferrable to minimize as much as possible the source resistance of the Vg power supply. Ref. : DSCHA30920356 21-Dec.-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 6

... Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA30920356 21-Dec.-00 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-33GHz Medium Power Amplifier 100pF 100pF 100pF To external control circuit ( 10kOhm ) ...

Page 7

... Ordering Information Chip form : CHA3092-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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