CHA2094B99F/00 UMS [United Monolithic Semiconductors], CHA2094B99F/00 Datasheet
CHA2094B99F/00
Related parts for CHA2094B99F/00
CHA2094B99F/00 Summary of contents
Page 1
Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2094 is a three-stage monolithic low noise amplifier designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with ...
Page 2
CHA2094b Electrical Characteristics Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop Operating frequency range (1) G Small signal gain (1) Small signal gain flatness (1) G Gain flatness over 40MHz ( within -30 ; +75°C ) Gsb Is Reverse isolation ...
Page 3
Low Noise Amplifier Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Vd = 3.5 Volt mA. Freq. S11 S11 GHz dB ° 25,00 -2,96 165,27 26,00 -3,22 155,96 27,00 -3,67 144,32 28,00 ...
Page 4
CHA2094b Typical Output Power ( P-1dB gain compression ) Measurements wafer ) Conditions : Vd = 3.5 Volt, Frequency = 38 GHz Conditions : ...
Page 5
Low Noise Amplifier Typical ( Gain & versus Id Measurements ( on wafer ). Conditions : Vd = 3.5 Volt, Frequency = 38 GHz Typical Measurements in Test Jig. ...
Page 6
CHA2094b Typical Bias Tuning for Low Noise Operation The circuit schematic is given below : IN For low noise operation, a separate access to the gate voltages of the two first stages ( Vgs1&2 ), and of the output stage ...
Page 7
Low Noise Amplifier Chip Assembly and Mechanical Data IN To Vgs 1&2 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 1080 10 415 ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. ...
Page 8
... Ordering Information Chip form : CHA2094b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...