CHA2194-99F/00 UMS [United Monolithic Semiconductors], CHA2194-99F/00 Datasheet
CHA2194-99F/00
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CHA2194-99F/00 Summary of contents
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... Symbol Parameter NF Noise figure at freq : 40GHz G Gain Gain flatness G ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA21942035 -04-Feb.-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 Self biased amplifier ...
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... Storage temperature range (3) Operation of this device above anyone of these paramaters may cause permanent damage. (4) Duration < 1s. (5) See chip biasing options page 9 Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 36-44GHz Low Noise Amplifier ...
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... Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S12 S21 mod Pha mod dB deg dB -75,42 44,36 -37,71 -68,73 -0,07 -38,99 -68,42 -40,89 -38,00 -62,78 -61,43 -31,40 -58,07 -92,78 -22,10 -54,16 -118,46 -15,19 -51,89 -167,25 -11,48 -52,93 158,44 -10,44 -51,04 165,85 -11,48 -49,77 164,40 -15,47 -48,14 114,15 -22,72 -47,48 73,88 -18,51 -48,97 61,97 -10,74 ...
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... Typical Gain , Matching and Noise Figure ( Measurements on wafer.) Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 36-44GHz Low Noise Amplifier ...
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... Typical Gain & Pout versus temperature (measurements in test-jig) Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Gain Vd:3,5V 42mA T:+25°C Gain Vd=3,5V 47mA T:+85°C Gain Vd:3,5V 57mA T:-40°C NF Vd=3,5V +25°C NF Vd=3,5V +85° ...
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... T ypical Output power –1dB. (Measurement in test Jig) Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 36-44GHz Low Noise Amplifier CHA2194 Vd=4V Vg1=Vg2=Vg3=+1V Pout (dBm) 36GHz Pout (dBm) 40GHz Pout (dBm) 44 GHz ...
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... Low Noise Amplifier Chip schematic and Pad Identification (see also page 9) Pad Size :80/80 m, chip thickness 100um Dimensions : 1670 m x 970µ Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 7/10 Specifications subject to change without notice ...
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... CHA2194 Typical Chip Assembly - * Nominal Input and Output bonding length :0.3 to 0.38nH for one 25 m bond wire. - Chip backside is DC and RF bonding grounded Ref : DSCHA21942035 -04-Feb.-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 ...
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... Vds ( V) Vg12 (V) Vg3 (V) Standard 3.5 Low Noise High linearity Low noise /low current consumption 3,5 Switch off 3.5 Ref : DSCHA21942035 -04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Internal DC schematic Id (mA) Typical NF(dB) Typical Gain (dB) Typical P-1dB (dB) Typical Psat (dB ...
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... CHA2194 Ordering Information Chip form : CHA2194-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...