CHA2294-99F/00 UMS [United Monolithic Semiconductors], CHA2294-99F/00 Datasheet

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CHA2294-99F/00

Manufacturer Part Number
CHA2294-99F/00
Description
35-40GHz Low Noise, Variable Gain Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet
Description
The CHA2294 is a high gain
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22942183 -01-July-02
Frequency range : 35-40GHz
4.0dB Noise Figure.
22dB gain
Gain control range: 15dB
Low DC power consumption, 120mA @ 5V
Chip size : 2.32 X 1.235 X 0.10 mm
Gctrl
Fop
NF
Id
G
35-40GHz Low Noise, Variable Gain Amplifier
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
Parameter
four-stage
1/6
IN
26
24
22
20
18
16
14
12
10
8
6
4
2
0
35
Specifications subject to change without notice
Typical on wafer measurements :Gain & NF
36
Min
35
Vg1
V5
37
Frequency (GHz)
Vg2
Typ
120
22
15
4
CHA2294
Vg3.4
Vd2
Gain (dB)
38
Max
40
Vd3,4
Vc
39
NF (dB)
Unit
GHz
mA
dB
dB
dB
40
OUT

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CHA2294-99F/00 Summary of contents

Page 1

... Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2294 is a high gain monolithic low noise amplifier with variable gain designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process ...

Page 2

... Maximum channel temperature Ta Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22942183 -01-July-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter V5= Vd2=Vd3,4 Vc Parameter ...

Page 3

... Gain & Return Loss versus frequency Ref. : DSCHA22942183 -01-July-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Gain (dB Frequency (GHz) S21 (dB) S11 (dB Frequency (GHz) 3/6 Specifications subject to change without notice ...

Page 4

... P-1dB (dBm Linear Gain & Output power @ 1dB compression versus frequency Ref. : DSCHA22942183 -01-July-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 37GHz 40GHz Output Power (dBm) Gain versus Output power ...

Page 5

... Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22942183 -01-July-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Vd2,3,4 DC Drain supply ...

Page 6

... Ordering Information Chip form : CHA2294-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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