CHA2194-99F/00 UMS [United Monolithic Semiconductors], CHA2194-99F/00 Datasheet - Page 2

• Manufacturer Part Number: CHA2194-99F/00
• Description: 36-44GHz Low Noise Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

CHA2194
Electrical Characteristics
Tamb = +25°C, Vd = +3,5V (On wafer)
Absolute Maximum Ratings
Tamb = +25°C
VSWRout Ouput VSWR (1)
Symbol
VSWRin
Symbol
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options page 9
(2) This current is the typical value for low noise and low current consumption biasing :
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
P1dB
Tstg
Ref : DSCHA21942035 -04-Feb.-02
Top
Fop
Pin
IP3
Vd
NF
Vg
Id
G
Id
G
Vd=3.5V , Vg12 and Vg3 not connected.
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1) (freq: 36-40 GHz)
Input VSWR (1)
3rd order intercept point
Output power at 1dB gain compression
Drain bias current (2)
Drain bias voltage (5)
Vg12 and Vg3 max
Drain current
Maximum peak input power overdrive (4)
Operating temperature range
Storage temperature range
Tel.: [phone] - Fax : [phone]
Parameter
Parameter
(3)
2/10
36-44GHz Low Noise Amplifier
Specifications subject to change without notice
Min
36
17
8
-55 to +125
-40 to +85
Values
2:5:1
2.5:1
Typ
3
19
20
10
45
+1
75
15
0.5
4
3.0:1
3.0:1
Max
44
75
4
1
mA
dBm
V
V
Unit
°C
°C
dBm
dBm
Unit
Ghz
mA
dB
dB
dB