MCM63R836FC3.0 FREESCALE [Freescale Semiconductor, Inc], MCM63R836FC3.0 Datasheet - Page 5

• Manufacturer Part Number: MCM63R836FC3.0
• Description: MCM63R836
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
NOTES:
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
PBGA PACKAGE THERMAL CHARACTERISTICS
CLOCK TRUTH TABLE
Core Supply Voltage
Output Supply Voltage
Voltage On Any Pin Other Than JTAG
Voltage On Any JTAG Pin
Input Current (per I/O)
Output Current (per I/O)
Operating Temperature
Temperature Under Bias
Storage Temperature
Junction to Ambient (Still Air)
Junction to Ambient (@200 ft/min)
Junction to Ambient (@200 ft/min)
Junction to Board (Bottom)
Junction to Case (Top)
L – H
L – H
L – H
L – H
L – H
L – H
L – H
L – H
L – H
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
2. Per SEMI G38–87.
3. Measured using a four–layer test board with two internal planes.
4. Indicates the average thermal resistance between the die and the printed circuit board as measured by the ring cold plate method.
5. Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC–883
K
X
temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
Method 1012.1).
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
ZZ
H
L
L
L
L
L
L
L
L
L
Rating
SS
H
H
X
L
L
L
L
L
L
L
SW
H
H
L
L
L
L
L
L
L
X
Freescale Semiconductor, Inc.
Rating
(Voltages Referenced to V SS , See Note)
For More Information On This Product,
Symbol
SBa
V JTAG
V DDQ
T bias
X
H
H
H
H
X
X
X
L
L
V DD
T stg
I out
V in
T A
I in
Go to: www.freescale.com
SBb
X
H
H
H
H
X
X
X
L
L
–0.5 to 3.9
–0.5 to 2.5
–0.5 to 2.5
–0.5 to 3.9
–55 to 125
Single–Layer Board
–10 to 85
0 to 70
Four–Layer Board
Value
50
25
SBc
H
H
H
H
X
X
X
X
L
L
SBd
X
H
H
H
H
X
X
X
L
L
Unit
mA
mA
V
V
V
V
C
C
C
High–Z
High–Z
High–Z
High–Z
High–Z
High–Z
High–Z
High–Z
DQ (n)
Symbol
X
X
R JA
R JA
R JA
R JB
R JC
inputs against damage due to high static volt-
ages or electric fields; however, it is advised that
normal precautions be taken to avoid applica-
tion of any voltage higher than maximum rated
voltages to this high–impedance circuit.
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
the output devices are in High–Z at power up.
This device contains circuitry to protect the
This device contains circuitry that will ensure
This CMOS memory circuit has been
D out 0 – 35
D in 18 – 26
D in 27 – 35
DQ (n + 1)
D in 9 – 17
D in 0 – 35
D in 0 – 8
High–Z
High–Z
High–Z
High–Z
MCM63R836 MCM63R918
Max
50
39
27
23
1
Read Cycle All Bytes
Write Cycle 2nd Byte
Write Cycle All Bytes
Write Cycle 3rd Byte
Write Cycle 1st Byte
Write Cycle 4th Byte
Abort Write Cycle
Deselect Cycle
Deselect Cycle
Sleep Mode
Mode
Unit
C/W
C/W
C/W
C/W
C/W
Notes
1, 2
1, 2
3
4
5
5