mcm63r836 Freescale Semiconductor, Inc, mcm63r836 Datasheet

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mcm63r836

Manufacturer Part Number
mcm63r836
Description
8m Late Write Hstl
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
8M Late Write HSTL
designed to provide high performance in secondary cache and ATM switch,
Telecom, and other high speed memory applications. The MCM63R918
(organized as 512K words by 18 bits) and the MCM63R836 (organized as 256K
words by 36 bits) are fabricated in Motorola’s high performance silicon gate
CMOS technology.
the RAM. At the rising edge of CK; all addresses, write enables, and synchronous
selects are registered. An internal buffer and special logic enable the memory to
accept write data on the rising edge of CK, a cycle after address and control
signals. Read data is also driven on the rising edge of CK.
and output voltage (V DDQ ) gives the system designer greater flexibility in
optimizing system performance.
entire word.
match the impedance of the circuit traces which reduces signal reflections.
MOTOROLA FAST SRAM
REV 1
10/12/00
Motorola, Inc. 2000
The MCM63R836/918 is an 8M–bit synchronous late write fast static RAM
The differential clock (CK) inputs control the timing of read/write operations of
The RAM uses HSTL inputs and outputs. The adjustable input trip–point (V ref )
The synchronous write and byte enables allow writing to individual bytes or the
The impedance of the output buffers is programmable, allowing the outputs to
Byte Write Control
2.5 V – 5% to 3.3 V + 10% Operation
HSTL — I/O (JEDEC Standard JESD8–6 Class I Compatible)
HSTL — User Selectable Input Trip–Point
HSTL — Compatible Programmable Impedance Output Drivers
Register to Register Synchronous Operation
Boundary Scan (JTAG) IEEE 1149.1 Compatible
Differential Clock Inputs
Optional x18 or x36 Organization
MCM63R836/918–3.0 = 3.0 ns
MCM63R836/918–3.3 = 3.3 ns
MCM63R836/918–3.7 = 3.7 ns
MCM63R836/918–4.0 = 4.0 ns
Sleep Mode Operation (ZZ pin)
119–Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Flipped Chip Plastic
Ball Grid Array (PBGA)
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
MCM63R836
MCM63R918
MCM63R836 MCM63R918
Order this document
CASE 999D–01
FC PACKAGE
by MCM63R836/D
PBGA
1

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mcm63r836 Summary of contents

Page 1

... ATM switch, Telecom, and other high speed memory applications. The MCM63R918 (organized as 512K words by 18 bits) and the MCM63R836 (organized as 256K words by 36 bits) are fabricated in Motorola’s high performance silicon gate CMOS technology. ...

Page 2

... DDQ TMS TDI TCK TDO MCM63R836 MCM63R918 For More Information On This Product, 2 FUNCTIONAL BLOCK DIAGRAM DATA IN REGISTER MEMORY ARRAY DATA OUT REGISTER CONTROL LOGIC PIN ASSIGNMENTS TOP VIEW ...

Page 3

... Freescale Semiconductor, Inc. MCM63R836 PIN DESCRIPTIONS Pin Locations 4K 4L (a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P (b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H (c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H (d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P 2A, 3A, 5A, 6A, 3B, 5B, 6B, 2C, 3C, 5C, 6C, 4N, 4P, 2R, 6R, 3T, 4T, 5T 5L, 5G, 3G, 3L (a), (b), (c), (d) ...

Page 4

... MCM63R836 MCM63R918 For More Information On This Product, 4 Symbol Type CK Input Address, data in, and control input register clock. Active high. ...

Page 5

... Write Cycle 2nd Byte – 26 Write Cycle 3rd Byte – 35 Write Cycle 4th Byte – 35 Write Cycle All Bytes High–Z Abort Write Cycle High–Z Deselect Cycle High–Z Deselect Cycle High–Z Sleep Mode MCM63R836 MCM63R918 5 ...

Page 6

... DDQ for all pins. 2. Measured at V ref = 0. Minimum instantaneous differential input voltage required for differential input clock operation. 4. Maximum rejectable common mode input voltage variation. MCM63R836 MCM63R918 For More Information On This Product 3 Unless Otherwise Noted) ...

Page 7

... C, Periodically Sampled Rather Than 100% Tested) Symbol C I to: www.freescale.com Max Unit Notes (V DDQ / [(RQ/5) – 10%] (V DDQ / [(RQ/5) – 10%] 0 DDQ V 6 Ω [(RQ/5) + 10%] 7 Max Unit Notes 0 DDQ DDQ V 6 Typ Max Unit MCM63R836 MCM63R918 7 ...

Page 8

... Chip Select Write Enable NOTES: 1. This parameter is sampled and not 100% tested. 2. Measured at 200 mV from steady state. 3. Measured at 200 mV from steady state. See Test Load Figure 1b. MCM63R836 MCM63R918 For More Information On This Product 3 Unless Otherwise Noted) 0.25 to 1.25 V Clock Input Timing Reference Level ZQ for 50 Ω ...

Page 9

... 0. Test Load Figure 1. Test Loads Symbol V IH (ac (ac) V ref (ac) V dif (ac) Go to: www.freescale.com Min Max Notes V ref + 200 mV — — V ref – 200 mV 2 — ref (dc) 3 400 mV V DDQ + 500 mV 4 MCM63R836 MCM63R918 9 ...

Page 10

... the Common Mode Input Voltage, equals V TR – [(V TR – )/2]. Figure 3. Differential Inputs/Common Mode Input Voltage V DDQ V IH (ac) V ref V IL (ac MCM63R836 MCM63R918 For More Information On This Product – 1.0 V – 1.5 V 35% t KHKH Figure 2. Undershoot Voltage CROSSING POINT Figure 4 ...

Page 11

... REGISTER/REGISTER READ–WRITE–READ CYCLES t KHKH CK t AVKH t KHAX SVKH SS SW SBx KHQV DQx Q–1 MOTOROLA FAST SRAM For More Information On This Product, t KHKL t KLKH KHSX t WVKH t KHWX t KHQZ t KHQX1 t KHQX t KHQX to: www.freescale.com A4 t KHDX t DVKH Q3 MCM63R836 MCM63R918 11 ...

Page 12

... MCM63R836 MCM63R918 For More Information On This Product, 12 É ...

Page 13

... Absolute Maximum Ratings table, V DDQ is not to exceed V DDQ + 0 2.0 V max, whatever the instantaneous value Once supplies have reached specification levels, a minimum dwell of 1.0 ms with CK clock inputs cycling is required before beginning normal operations. At power up the output impedance will be set at approximately 50 Ω as stated above. Go to: www.freescale.com MCM63R836 MCM63R918 13 ...

Page 14

... 0 2.4 V. MCM63R836 MCM63R918 For More Information On This Product not allowed write or read operation occurs during these periods, the memory array may be corrupted. Validity of data out from the RAM can not be guaranteed immediately after ZZ is asserted (prior to being in sleep) ...

Page 15

... TLQV t TLQX Go to: www.freescale.com 50 Ω Parallel Terminated T–line with Receiver Input Capacitance . . . . . . . . . . . . . . . 1.5 V Min Max Unit Notes 100 — — — — — — — — — — ns — MCM63R836 MCM63R918 15 ...

Page 16

... The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs TAP to another device in the scan chain with as little delay as possible. MCM63R836 MCM63R918 For More Information On This Product, 16 BOUNDARY SCAN REGISTER ...

Page 17

... Freescale Semiconductor, Inc. MCM63R836 Bump/Bit Scan Order Bit Signal g Bump p Bit Signal No. Name ID No DQa DQa DQa DQa DQa DQa DQa DQa ...

Page 18

... Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results can not be MCM63R836 MCM63R918 For More Information On This Product, 18 expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup, plus hold time (t CS plus ...

Page 19

... CAPTURE–DR 0 SHIFT– EXIT1–DR 0 PAUSE– EXIT2–DR 1 UPDATE– Figure 6. TAP Controller State Diagram Go to: www.freescale.com SELECT IR–SCAN CAPTURE–IR 0 SHIFT– EXIT1–IR 0 PAUSE– EXIT2–IR 1 UPDATE– MCM63R836 MCM63R918 19 ...

Page 20

... Freescale Semiconductor, Inc. Motorola Memory Prefix Part Number Full Part Numbers — MCM63R836FC3.0 MCM63R836FC3.3 MCM63R836FC3.7 MCM63R836FC4 PIN A1 INDEX TOP VIEW BOTTOM VIEW MCM63R836 MCM63R918 For More Information On This Product, ...

Page 21

... Motorola, Inc. Motorola, Inc Equal JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tao Po, N.T., Hong Kong. 852-26668334 Go to: www.freescale.com MCM63R836/D MCM63R836 MCM63R918 21 ...

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