k9f6408q0c Samsung Semiconductor, Inc., k9f6408q0c Datasheet - Page 14

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k9f6408q0c

Manufacturer Part Number
k9f6408q0c
Description
8m X 8 Bit Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K9F6408Q0C
K9F6408U0C
NAND Flash Technical Notes
Erase Flow Chart
*
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’ )
* Step3
Then, Copy the 1st ~ (n-1)th data to the same location of the Block ’B’ .
* Step4
Do not further erase Block ’A’ by creating a ’invalid Block’ table or other appropriate scheme.
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
No
Read Status Register
Write Block Address
Block A
Block B
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
(Continued)
2
1
Buffer memory of the controller.
No
14
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes

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