pbss5320t NXP Semiconductors, pbss5320t Datasheet - Page 4

• Manufacturer Part Number: pbss5320t
• Description: 20 V, 3 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 15
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE(on)
CEsat
c
20 V, 3 A
PNP low V
= 25 C unless otherwise specified.
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 100 mA; V
= 5 V; I
= 20 V; I
= 20 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
CONDITIONS
B
B
B
B
B
B
B
C
= 50 mA
= 300 mA; note 1
= 200 mA; note 1
C
C
C
C
C
= 100 mA; note 1
= 200 mA; note 1
= 100 mA; note 1
= 300 mA; note 1
C
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 3 A; note 1
= 1 A; note 1
B
4
= 0
= 0; T
= I
CE
= 50 mA
e
= 5 V;
= 0; f = 1 MHz
j
= 150 C
220
220
200
150
100
100
1.2
MIN.
75
TYP.
PBSS5320T
Product specification
105
50
MAX.
100
50
100
70
130
230
210
300
1.1
1.2
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A