PHMB200B12_1 NIEC [Nihon Inter Electronics Corporation], PHMB200B12_1 Datasheet - Page 3

• Manufacturer Part Number: PHMB200B12_1
• Description: 200A 1200V
• Manufacturer: NIEC [Nihon Inter Electronics Corporation]

ＰＨＭＢ２００Ｂ１２
1000
0.05
500
200
100
0.5
0.2
0.1
50
20
10
10
5
5
2
1
0
1
I
T
V
I
V
T
F
Fig.7- Series Gate Impedance vs. Switching Time
C
C
=200A
C
CC
GE
=200A
=25℃
=25℃
=600V
=±15V
I
RrM
Fig.9- Reverse Recovery Characteristics
trr
2
200
Series Gate Impedance R
5
400
5x10
2x10
1x10
5x10
2x10
1x10
5x10
2x10
1x10
5x10
-di/dt
-1
-1
-1
-2
-2
-2
-3
-3
-3
-4
1
10
10
-5
600
(A/μs)
20
800
toff
G
10
ton
-4
(Ω)
50
(Typical)
1000
Fig.11- Transient Thermal Impedance
100
(Typical)
日本インター株式会社
10
tr
tf
-3
1200
200
Time t
10
-2
(s)
1000
500
200
100
400
300
200
100
0.5
0.2
0.1
50
20
10
5
2
1
0
0
0
10
-1
Fig.8- Forward Characteristics of Free Wheeling Diode
T
1 Shot Pulse
Fig.10- Reverse Bias Safe Operating Area
C
Collector to Emitter Voltage V
=25℃
400
1
1
Forward Voltage V
IGBT
FRD
T
10
C
800
=25℃
2
1
F
QS043-401M0052 (4/4)
(V)
T
C
CE
=125℃
1200
3
(V)
R
V
T
(Typical)
C
G
GE
=2Ω
≦125℃
=±15V
1600
4