PHM8001 NIEC [Nihon Inter Electronics Corporation], PHM8001 Datasheet

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PHM8001

Manufacturer Part Number
PHM8001
Description
MOSFET MODULE Single 900A/150A
Manufacturer
NIEC [Nihon Inter Electronics Corporation]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHM8001
Manufacturer:
VICOR
Quantity:
492
Part Number:
PHM8001
Quantity:
60
MOSFET
Drain-Source Voltage (V
Gate - Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Mounting Torque
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rise Time
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
THERMAL CHRACTERISTICS
MAXMUM RATINGS
ELECTRICAL CHARACTERISTICS
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
FEATURES
* Trench Gate MOS FET Module
* Super Low Rds(ON) 1.4 milliohms( @800A )
* With Fast Recovery Source-Drain Diode
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
Characteristic
Characteristic
Characteristic
MODULE
Module Base to Heatsink
Gate Terminals
Bus Bar to Main Terminals
Ratings
GS
=0V)
Duty=50%
Symbol
Symbol
Single 800A /150V
Single 800A /150V
Single 800A /150V
Single 800A /150V
D.C.
R
R
V
I
I
t
th(j-c)
th(c-f)
SM
(@Tc=25 C unless otherwise noted)
SD
rr
S
Duty=50%.
D.C. (Terminal Temperature=80
I
I
Mounting surface flat, smooth, and greased
S
S
=800A
=800A, -dis/dt=1,600A/
Symbol
V
V
Symbol
r
I
I
t
C
t
DS(on)
C
C
DS(on)
GS(th)
g
d(on)
d(off)
DSS
GSS
V
V
F
t
t
V
oss
I
T
fs
ies
rss
T
r
f
P
I
DM
TOR
DSS
GSS
ISO
D
stg
jw
D
Test Condition
Test Condition
V
V
V
V
V
V
V
V
I
V
R
D
DS
GS
DS
GS
GS
DS
DS
DD
GS
G
=400A
= 0.75 ohm
=V
=+/- 20V,V
=V
=10V, I
=10V, I
=15V, I
=10V,V
= -5V, +10V
= 80V
DSS
GS
-
Circuit
Test Condition
, I
,V
D
M4
M8
D
D
D
GS
s
=16mA
GS
=800A
=800A
=800A
=0V,f=1MHz
=0V
DS
(Tc=25 C)
OUTLINE DRAWING
=0V
C
1,600 Tc=25 C)
2,650 Tc=25 C)
800 (Tc=25 C)
640 (Tc=25 C)
-40 to +150
-40 to +125
PHM8001
+/ - 20
2,500
150
3.0
Min.
Min.
-
-
-
-
-
-
Min.
1.0
-
-
-
-
-
-
-
-
-
-
-
-
10.5
1.4
Approximate Weight : 650g
Typ.
Typ.
PHM8001
PHM8001
1.10
PHM8001
PHM8001
130
1,300
Typ.
-
-
-
-
1.15
1.10
165
500
880
180
2.0
20
20
-
-
-
Max.
Max.
0.035
1,600
0.047
1.76
Max.
800
650
1.25
4.8
4.8
3.2
1.4
-
-
-
-
-
-
-
-
-
m-ohm
Unit
N m
Unit
Unit
Unit
C/W
mA
nF
nF
nF
ns
W
ns
V
V
V
V
A
A
V
S
A
A
V
C
C
A

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PHM8001 Summary of contents

Page 1

... =800A, -dis/dt=1,600A Symbol Test Condition R th(j-c) R Mounting surface flat, smooth, and greased th(c-f) PHM8001 PHM8001 PHM8001 PHM8001 OUTLINE DRAWING Approximate Weight : 650g PHM8001 150 +/ - 20 800 (Tc=25 C) 640 (Tc=25 C) 1,600 Tc=25 C) 2,650 Tc=25 C) -40 to +150 -40 to +125 2,500 3.0 1.4 10.5 Min. Typ ...

Page 2

... PHM8001 OUTLINE DRAWING (Dimensions in mm) ...

Page 3

Fig.1- Output Characteristics 1600 4V V =10V GE 3V 1400 8V 1200 1000 800 600 400 200 0 0 0.5 1 1.5 2 2.5 Drain to Source Voltage V Fig.3- Drain to Source On Voltage vs. Junction Temperature 2.5 2 ...

Page 4

Fig.7- Drain Current vs. Switching Time 1.2 V =80V DD R =0.75Ω =25℃ td(off) 0.8 0.6 0.4 td(on 0 200 400 Drain Current I (A) D Fig.9- Reverse Recovery Characteristics 500 ...

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