PHM8001 NIEC [Nihon Inter Electronics Corporation], PHM8001 Datasheet - Page 3

• Manufacturer Part Number: PHM8001
• Description: MOSFET MODULE Single 900A/150A
• Manufacturer: NIEC [Nihon Inter Electronics Corporation]

1600
1400
1200
1000
800
600
400
200
2.5
1.5
0.5
16
14
12
10
2
1
0
0
8
6
4
2
0
-50
0
0
Fig.5- Gate Charge vs. Gate to Source Voltage
0.5
1000
Fig.3- Drain to Source On Voltage
Fig.1- Output Characteristics
Drain to Source Voltage V
0
1
vs. Junction Temperature
Junction Temperature Tj
2000
Total Gate Charge Qg
8V
V
GE
1.5
=10V
3000
V
DD
50
=80V
2
V
DD
4V
4000
=40V
3V
I
I
I
D
D
D
V
2.5
=400A
=200A
=800A
DD
=20V
(nC)
DS
250μs PULSE TEST
(℃)
(Typical)
250μs PULSE TEST
5000
(Typical)
(V)
100
3
6000
(Typical)
3.5
V
T
GS
I
C
D
=25℃
=10V
=800A
2V
7000
150
4
200000
175000
150000
125000
100000
75000
50000
25000
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.5
0.2
0.1
50
20
10
0
2
1
0
5
2
1
0.5
0.5
0
V
I
T
D
Fig.4- Capacitance vs. Drain to Source Voltage
Fig.6- Series Gate Impedance vs. Switching Time
C
DD
=400A
=25℃
td(off)
=80V
tr
td(on)
tf
1
2
1
Fig.2- Drain to Source On Voltage
Ciss
Crss
Coss
2
Gate to Source Voltage V
vs. Gate to Source Voltage
4
Drain to Source Voltage V
Series Gate Impedance R
2
6
5
5
10
8
10
20
I
I
I
10
D
D
D
=800A
=200A
=400A
GS
G
DS
250μs PULSE TEST
(Ω)
(Typical)
20
(V)
(V)
12
50
(Typical)
V
f=1MH
T
14
(Typical)
100
C
T
GS
50
=25℃
C
=0V
=25℃
Z
80
200
16