k9k8g08u0a-y Samsung Semiconductor, Inc., k9k8g08u0a-y Datasheet - Page 50

• Manufacturer Part Number: k9k8g08u0a-y
• Description: 1g X 8 Bit / 2g X 8 Bit / 4g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down. A recovery time of minimum 100µs is required before internal circuit gets ready for any command
sequences as shown in Figure 21. The two step command sequence for program/erase provides additional software protection.
Figure 21. AC Waveforms for Power Transition
WP
WE
V
K9WAG08U1A
K9K8G08U0A K9NBG08U5A
CC
3.3V device : ~ 2.5V
100µs
High
50
FLASH MEMORY
3.3V device : ~ 2.5V
IL