k9k8g08u0a-y Samsung Semiconductor, Inc., k9k8g08u0a-y Datasheet - Page 14

• Manufacturer Part Number: k9k8g08u0a-y
• Description: 1g X 8 Bit / 2g X 8 Bit / 4g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC Timing Characteristics for Command / Address / Data Input
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
Program / Erase Characteristics
NOTE : 1. Typical value is measured at Vcc=3.3V, T
ture
K9WAG08U1A
K9K8G08U0A K9NBG08U5A
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
Program Time
Dummy Busy Time for Two-Plane Page Program
Number of Partial Program Cycles
Block Erase Time
.
2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Parameter
Parameter
Symbol
t
t
t
t
t
CLS
ALS
ADL
t
t
CS
t
DS
t
t
t
t
CLH
ALH
WC
WH
WP
CH
DH
(1)
(1)
(1)
(1)
(2)
A
=25°C. Not 100% tested.
K9NBG08U5A
25
10
35
10
25
25
10
20
10
45
15
70
Symbol
t
t
t
Min
PROG
Nop
DBSY
BERS
14
K9WAG08U1A
K9K8G08U0A
12
20
12
12
12
25
10
70
5
5
5
5
Min
-
-
-
-
K9NBG08U5A
Typ
200
0.5
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
K9WAG08U1A
K9K8G08U0A
Max
700
1
4
2
-
-
-
-
-
-
-
-
-
-
-
-
°
C tempera-
cycles
Unit
ms
µs
µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns