k9k8g08u0m-y Samsung Semiconductor, Inc., k9k8g08u0m-y Datasheet - Page 3

• Manufacturer Part Number: k9k8g08u0m-y
• Description: 1g X 8 Bit / 2g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

PRODUCT LIST
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200 s on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0M s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0M is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
FEATURES
K9WAG08U1M
K9K8G08U0M
- 2.70V ~ 3.60V
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Size : (2K + 64)Byte
- Random Read : 20 s(Max.)
- Serial Access : 25ns(Min.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
K9K8G08U0M-Y,P
K9WAG08U1M-Y,P
K9WAG08U1M-I
Part Number
2.70 ~ 3.60V
Vcc Range
3
ECC)
- K9WAG08U1M-ICB0/IIB0
- Page Program time : 200 s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase CyclesOwith 1bit/512Byte
- Data Retention : 10 Years
- K9K8G08U0M-YCB0/YIB0
- K9K8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
- K9WAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection
Package :
- K9WAG08U1M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
Organization
X8
FLASH MEMORY
PKG Type
Preliminary
52TLGA
TSOP1