k9k8g08u0m-y Samsung Semiconductor, Inc., k9k8g08u0m-y Datasheet - Page 11

• Manufacturer Part Number: k9k8g08u0m-y
• Description: 1g X 8 Bit / 2g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08UXM-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : 1. V
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
K9WAG08U1M
K9K8G08U0M
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Operating
Supply Voltage
Supply Voltage
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Current
Maximum DC voltage on input/output pins is V
2. Typical value is measured at Vcc=3.3V, T
3. The typical value of the K9WAG08U1M’s
4. The maximum value of K9WAG08U1M-Y,P’s I
Parameter
IL
Parameter
can undershoot to -0.4V and V
Page Read with
Serial Access
Program
Erase
Parameter
K9XXG08UXM-XCB0
K9XXG08UXM-XIB0
K9XXG08UXM-XCB0
K9XXG08UXM-XIB0
Symbol
I
OL
V
V
I
I
I
I
I
V
V
CC
CC
CC
SB
SB
I
I
(R/B)
IH
LO
IL
OH
Symbol
LI
OL
(1)
1
2
(1)
1
2
3
IH
V
V
CC
SS
can overshoot to V
CC
A
+0.3V which, during transitions, may overshoot to V
I
tRC=25ns
CE=V
CE=V
CE=V
V
V
I
I
V
SB
=25 C. Not 100% tested.
OH
OL
IN
OUT
OL
2
=2.1mA
=0 to Vcc(max)
=-400 A
LI
=0.4V
is 40
:
=0 to Vcc(max)
and I
T
IL,
IH
CC
A
=0 to 70 C, K9XXG08UXM-XIB0
, WP=0V/V
Test Conditions
I
-0.2, WP=0V/V
OUT
A
LO
and the maximum value is 200
is
=0mA
CC
Min
±40 A
2.7
0
+0.4V for durations of 20 ns or less.
(Recommended operating conditions otherwise noted.)
-
-
-
-
CC
11
Symbol
the maximum value of K9WAG08U1M-I’s I
CC
T
T
V
V
V
I
BIAS
STG
OS
CC
I/O
IN
Typ.
3.3
0.8xVcc
0
Min
-0.3
2.4
8
-
-
-
-
-
-
A.
-0.6 to Vcc+0.3 (<4.6V)
:
T
A
=-40 to 85 C)
CC
-0.6 to +4.6
-0.6 to +4.6
-10 to +125
-40 to +125
-65 to +150
+2.0V for periods <20ns.
Rating
5
Typ
FLASH MEMORY
15
20
10
-
-
-
-
-
-
-
Max
3.6
0
LI
and I
Preliminary
Vcc+0.3
0.2xVcc
Max
100
±20
±20
LO
0.4
30
1
-
-
is
±20 A
Unit
Unit
mA
V
V
V
C
C
Unit
mA
mA
V
A