bf512 NXP Semiconductors, bf512 Datasheet - Page 4

• Manufacturer Part Number: bf512
• Description: N-channel Silicon Field-effect Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
December 1997
handbook, halfpage
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
Noise figure at optimum source admittance
N-channel silicon field-effect transistors
V
G
f = 100 MHz
Fig.2
GS
S
(pF)
C rs
= 1 mS; B
1.5
0.5
= 0 instead of I
1
0
0
V
I
f = 1 MHz; T
D
GS
= 5 mA for BF512 and BF513;
= 0 for BF510 and BF511;
4
S
= 3 mS;
typ
D
amb
= 5 mA
8
= 25 C.
12
16
V DS (V)
MDA275
20
V
V
C
g
C
C
g
g
F
is
os
os
DS
DS
y
y
y
is
rs
os
fs
fs
fs
= 10 V; V
= 10 V; I
typ.
typ.
typ.
typ.
typ.
4
D
handbook, halfpage
GS
= 5 mA; T
Fig.3
= 0; T
(mS)
y fs
10
BF510
8
6
4
2
0
0
amb
100
BF510
0.4
0.5
2.5
3.5
1.5
V
values.
60
35
amb
DS
5
3
= 25 C for BF510 and BF511
= 25 C for BF512 and BF513
= 10 V; f = 1 kHz; T
511
0.4
0.5
4.0
5.5
1.5
BF511
5
90
80
55
5
3
BF512
512
100
0.4
0.5
4.0
6.0
5.0
1.5
60
70
5
3
10
BF510 to 513
amb
Product specification
= 25 C; typical
I D (mA)
BF513
513
120
0.4 pF
0.5 pF
3.5 mS
7.0 mS
5.0 mS
1.5 dB
MDA276
50
90
5 pF
3 pF
15
S
S
S