bf512 NXP Semiconductors, bf512 Datasheet - Page 3

• Manufacturer Part Number: bf512
• Description: N-channel Silicon Field-effect Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm
STATIC CHARACTERISTICS
T
December 1997
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
amb
N-channel silicon field-effect transistors
I
V
I
S
D
V
DS
= 25 C
= 0; I
= 10 A; V
GS
= 10 V; V
= 0.2 V; V
D
= 10 A
DS
GS
DS
= 10 V
= 0
= 0
amb
= 40 C (note 1)
I
DSS
I
V
V
GSS
(BR)GDO
(P)GS
10 mm
0.7 mm.
<
typ.
3
BF510
0.7
3.0
0.8
10
20
511
R
V
V
I
P
T
T
D
2.5
7.0
1.5
stg
j
DS
DGO
tot
th j-a
10
20
I
G
512
2.2
10
20
12
max.
max.
max.
max.
max.
max.
=
6
65 to
BF510 to 513
Product specification
513
250 mW
150
150
430 K/W
20 V
20 V
30 mA
10 mA
10 nA
20 V
10
18
3 V
mA
mA
C
C