MTB6N60 MOTOROLA [Motorola, Inc], MTB6N60 Datasheet - Page 6

• Manufacturer Part Number: MTB6N60
• Description: TMOS POWER FET 6.0 AMPERES 600 VOLTS
• Manufacturer: MOTOROLA [Motorola, Inc]

MTB6N60E
6
100
1.0
0.1
10
0.1
0.01
0.1
Figure 14. Diode Reverse Recovery Waveform
1
V GS = 20 V
SINGLE PULSE
T C = 25 C
Figure 11. Maximum Rated Forward Biased
0.00001
I S
0.1
0.2
0.05
D = 0.5
0.02
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
t p
1
Safe Operating Area
0.01
di/dt
0.0001
t a
10
100 s
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
t rr
t b
I S
1 ms
0.25 I S
10 ms
100
0.001
dc
SAFE OPERATING AREA
10 s
Figure 13. Thermal Response
TIME
1000
t, TIME (SECONDS)
0.01
Motorola TMOS Power MOSFET Transistor Device Data
450
400
350
300
250
200
150
100
2.5
2.0
1.5
0.5
50
P (pk)
3
1
0
0
25
25
Figure 12. Maximum Avalanche Energy versus
DUTY CYCLE, D = t 1 /t 2
Figure 15. D 2 PAK Power Derating Curve
t 1
t 2
T J , STARTING JUNCTION TEMPERATURE ( C)
Starting Junction Temperature
50
R JA = 50 C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
50
0.1
T A , AMBIENT TEMPERATURE ( C)
75
75
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
450 mils x 350 mils
100
100
1
125
125
I D = 6 A
150
10
150