MTB6N60 MOTOROLA [Motorola, Inc], MTB6N60 Datasheet - Page 3

• Manufacturer Part Number: MTB6N60
• Description: TMOS POWER FET 6.0 AMPERES 600 VOLTS
• Manufacturer: MOTOROLA [Motorola, Inc]

Motorola TMOS Power MOSFET Transistor Device Data
2.5
1.5
0.5
2.5
2.0
1.5
1.0
0.5
12
10
2
1
0
8
6
4
2
0
0
– 50
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
I D = 3 A
T J = 25 C
V GS = 10 V
– 25
Figure 5. On–Resistance Variation with
2
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
4
T J , JUNCTION TEMPERATURE ( C)
0
I D , DRAIN CURRENT (AMPS)
6
and Temperature
4
25
Temperature
T J = 100 C
8
– 55 C
25 C
50
V GS = 10 V
6
10
TYPICAL ELECTRICAL CHARACTERISTICS
75
12
8
100
8 V
14
10
7 V
125
16
5 V
4 V
6 V
150
18
12
10000
1000
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
10
12
10
1
8
6
4
2
0
2.0
0
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
V DS 10 V
T J = 25 C
2.5
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
100
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
3.0
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
200
4
3.5
T J = 125 C
V GS = 10 V
100 C
25 C
300
15 V
4.0
6
100 C
4.5
400
8
T J = – 55 C
5.0
MTB6N60E
500
10
25 C
5.5
3
600
6.0
12