SPP8803TS8RG SYNC-POWER [SYNC POWER Crop.], SPP8803TS8RG Datasheet
SPP8803TS8RG
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SPP8803TS8RG Summary of contents
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SPP8803 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. ...
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... Pin ORDERING INFORMATION Part Number SPP8803TS8RG SPP8803TS8TG ※ SPP8803TS8RG : 13” Tape Reel ; Pb – Free ※ SPP8803TS8TG : Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(T =150 ) ...
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SPP8803 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unless o therwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward ...
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SPP8803 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2008 / 04 /20 Page 4 ...
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SPP8803 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2008 / 04 /20 Page 5 ...
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SPP8803 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2008 / 04 /20 Page 6 ...
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SPP8803 P-Channel Enhancement Mode MOSFET TSSOP- 8P PACKAGE OUTLINE Ver.1 2008 / 04 /20 Page 7 ...
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SPP8803 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties ...