SPP1305S32RG SYNC-POWER [SYNC POWER Crop.], SPP1305S32RG Datasheet

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SPP1305S32RG

Manufacturer Part Number
SPP1305S32RG
Description
P-Channel Enhancement Mode MOSFET
Manufacturer
SYNC-POWER [SYNC POWER Crop.]
Datasheet

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Part Number:
SPP1305S32RG
Quantity:
1 883
2007/10/ 01
DESCRIPTION
The SPP1305 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
-20V/-0.95A,R
-20V/-0.80A,R
-20V/-0.70A,R
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
Ver.1
SPP1305
P-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
= 280mΩ@V
= 380mΩ@V
= 530mΩ@V
GS
GS
GS
=-4.5V
=-2.5V
=-1.8V
APPLICATIONS
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
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SPP1305S32RG Summary of contents

Page 1

SPP1305 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These ...

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... P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPP1305S32RG ※ Week Code : ※ SPP1305S32RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(T ...

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SPP1305 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Un less otherwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward ...

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SPP1305 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2007/10/ 01 Page 4 ...

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SPP1305 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2007/10/ 01 Page 5 ...

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SPP1305 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2007/10/ 01 Page 6 ...

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SPP1305 P-Channel Enhancement Mode MOSFET SOT-323 PACKAGE OUTLINE Ver.1 2007/10/ 01 Page 7 ...

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SPP1305 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties ...

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