SPP2301S23RG SYNC-POWER [SYNC POWER Crop.], SPP2301S23RG Datasheet

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SPP2301S23RG

Manufacturer Part Number
SPP2301S23RG
Description
P-Channel Enhancement Mode MOSFET
Manufacturer
SYNC-POWER [SYNC POWER Crop.]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPP2301S23RG
Manufacturer:
SYNCPOWER
Quantity:
20 000
Part Number:
SPP2301S23RGB
Manufacturer:
SYNCPOWER
Quantity:
20 000
2007/02/02
DESCRIPTION
The SPP2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
-20V/-2.8A,R
-20V/-2.0A,R
Super high density cell design for extremely low
R
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
DS (ON)
Ver.3
SPP2301
P-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
=120mΩ@V
=170mΩ@V
GS
GS
=-4.5V
=-2.5V
APPLICATIONS
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
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SPP2301S23RG Summary of contents

Page 1

SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These ...

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... SPP2301 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPP2301S23RG ※ Week Code : ※ SPP2301S23RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage ...

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SPP2301 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unl ess otherwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward ...

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SPP2301 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.3 2007/02/02 Page 4 ...

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SPP2301 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.3 2007/02/02 Page 5 ...

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SPP2301 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.3 2007/02/02 Page 6 ...

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SPP2301 P-Channel Enhancement Mode MOSFET SOT-23-3L PACKAGE OUTLINE Ver.3 2007/02/02 Page 7 ...

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SPP2301 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties ...

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