IPB80N04S2-H4_08 INFINEON [Infineon Technologies AG], IPB80N04S2-H4_08 Datasheet - Page 3

• Manufacturer Part Number: IPB80N04S2-H4_08
• Description: OptiMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.1
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.5K/W the chip is able to carry 200A at 25°C. For detailed
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=80 A, R
=25 °C
F
F
page 3
=25 °C
=20 V, I
=20 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=20 V, V
=32 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
DS
=80 A,
=I
=I
D
=1.3
GS
=80 A,
=25 V,
S
S
=10 V,
,
,
IPP80N04S2-H4, IPI80N04S2-H4
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
4400
1800
typ.
480
103
195
370
4.9
0.9
23
63
46
22
21
38
-
-
IPB80N04S2-H4
max.
148
320
1.3
29
70
80
-
-
-
-
-
-
-
-
-
-
2008-02-22
Unit
pF
ns
nC
V
A
V
ns
nC