IPB80N04S2-H4_08 INFINEON [Infineon Technologies AG], IPB80N04S2-H4_08 Datasheet

Page 1

... =100 ° = =25 °C D,pulse =80A =25 °C tot stg page 1 IPB80N04S2- (SMD version) 3 PG-TO262-3-1 PG-TO220-3-1 Value Unit 320 660 mJ ±20 V 300 W -55 ... +175 °C 55/175/56 2008-02-22 ...

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... GS I DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Values min. typ. max 0 2.1 3 100 = 100 - 3 ...

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... V = /dt =100 A/µ = /dt =100 A/µ 0.5K/W the chip is able to carry 200A at 25°C. For detailed thJC page 3 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Values min. typ. max. - 4400 = 1800 - 480 - = ...

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... C 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 100 µ 100 [V] DS page 4 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - ...

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... [V] 8 Typ. Forward transconductance parameter: g 200 175 150 125 100 -55 ° [V] page 5 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- ° 5 160 240 I [ 25° 100 I [ ...

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... Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 1 10 Crss [V] page 6 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- 1250 µA 250 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] ...

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... Rev. 1.1 14 Typ. gate charge V = f(Q GS gate 125 175 0 16 Gate charge waveforms 100 140 180 page 7 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- pulsed 100 Q [nC] gate gate gate ...

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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 page 8 IPB80N04S2-H4 2008-02-22 ...

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... Revision History Version Revision 1.1 Revision 1.1 Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 Date 22.02.2008 22.02.2008 page 9 IPB80N04S2-H4 Changes Update of side 1 and 10 according to new template Update of SOA diagram, labelling 2008-02-22 ...