SPD09P06PLG INFINEON [Infineon Technologies AG], SPD09P06PLG Datasheet - Page 7

• Manufacturer Part Number: SPD09P06PLG
• Description: SIPMOS Power-Transistor Feature N-Channel Enhancement mode
• Manufacturer: INFINEON [Infineon Technologies AG]

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
= f (T
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
80
60
50
40
30
20
10
D
0
-60
Rev 2.5
25
SPD09P06PL
= -9.7 A , V
j
= f (T
)
45
-20
65
j
)
20
85
DD
60
= -25 V, R
105
100
125
145
140
GS
°C
°C
= 25
T
T
j
j
185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
SPD09P06PL
Gate
4
D
= -9.7 A pulsed
)
0,2
8
V
DS max
12
SPD09P06PL G
16
0,8 V
DS max
20
2008-07-29
nC
Q
Gate
28