SPD09P06PLG INFINEON [Infineon Technologies AG], SPD09P06PLG Datasheet - Page 2

• Manufacturer Part Number: SPD09P06PLG
• Description: SIPMOS Power-Transistor Feature N-Channel Enhancement mode
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=-250µA
=-60V, V
=-60V, V
=0V, I
=-20V, V
=-4.5V, I
=-10V, I
Rev 2.5
2
cooling area
D
=-250µA
D
D
GS
GS
DS
=-6.8A
=-5.4A
=0V, T
=0V, T
=0V
j
j
1)
=25°C
=150°C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-1.5
-10
typ.
-10
0.3
0.2
-
-
-
-
-
SPD09P06PL G
max.
max.
-100
-100
0.25
100
0.4
3.6
75
50
2008-07-29
-2
-1
-
Unit
V
µA
nA
Unit
K/W