16DR12M NELLSEMI [Nell Semiconductor Co., Ltd], 16DR12M Datasheet

no-image

16DR12M

Manufacturer Part Number
16DR12M
Description
Glass Passivated Standard Recovery Diodes (Stud Version), 16A
Manufacturer
NELLSEMI [Nell Semiconductor Co., Ltd]
Datasheet
FEATURES
ELECTRICAL SPECIFICATIONS
TYPICAL APPLICATIONS
Note
(1) Avalanche version only available from V
Glass passivated chips
High surge current capability
Stud cathode and stud anode version
Voltage up to 1600V V
RoHS compliant
Battery charges
Converters
Power supplies
Machine tool controls
Wide current range
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
VOLTAGE RATINGS
NUMBER
16D( R )
TYPE
SEMICONDUCTOR
V
I
I
I
F(AV)
F(RMS)
FSM
I t
RRM
T
2
J
PARAMETER
I
F(AV)
VOLTAGE
CODE
02
04
06
10
12
16
08
Glass Passivated Standard Recovery Diodes
RRM
RRM
REVERSE VOLTAGE
REPETITIVE PEAK
400V to 1600V
V
Range
RRM
50 HZ
60 HZ
50 HZ
60 HZ
T
C
,MAXIMUM
1000
1200
1600
TEST CONDITIONS
200
400
600
800
V
16A
(Stud Version), 16A
Page 1 of 5
NON-REPETITIVE
PEAK VOLTAGE
V
RSM
,MAXIMUM
1200
1400
1800
950
500
725
275
V
200 to 1600
-65 to 175
VALUES
140
350
370
612
558
16
25
16D(R)Series
N
ell
V
High Power Products
AVALANCHE
R(BR)
VOLTAGE
1150
1350
1750
500
750
950
DO-203AA(DO-4)
,MIMIMUM
-
V
(1)
UNIT
A s
ºC
ºC
A
A
A
V
2
V
RRM
AT TJ=175 C
,MAXIMUM
mA
12
RoHS
RoHS
°

Related parts for 16DR12M

16DR12M Summary of contents

Page 1

SEMICONDUCTOR Glass Passivated Standard Recovery Diodes FEATURES Glass passivated chips High surge current capability Stud cathode and stud anode version Wide current range Voltage up to 1600V V RRM RoHS compliant TYPICAL APPLICATIONS Battery charges Converters Power supplies Machine tool ...

Page 2

SEMICONDUCTOR FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current Maximum on-repetitive peak reverse power Maximum peak, one-cycle forward, non-reptitive surge current Maximum l²t for fusing √ Maximum l² t for fusing Maximum forward voltage ...

Page 3

SEMICONDUCTOR Fig.1 Current Ratings Characteristics 180 16D(R)Series R (DC)=1.6K/W thJC 170 160 Conduction Angle 150 90° 140 60° 120° 30° 180° 130 Average Forward Current (A) Fig. 3 Forward Power Loss Characteristics 20 180° 120° ...

Page 4

SEMICONDUCTOR Fig. 5 Maximum Non-Repetitive Surge Current 325 At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 300 Initial TJ = 175°C @60 Hz 0.0083 s 275 @50 Hz 0.0100 s 250 225 200 175 150 ...

Page 5

SEMICONDUCTOR 11.6/12.4 (0.45/0.48) Ø8.5/Ø8.9 (Ø0.33/Ø0.35) Ø1.5/Ø1.7 Ø0.05/Ø0.06 16D(R)Series N 3.7/4.3 (0.14/0.16) 10/32” UNF-2A × For metric devices: M5 0.8 Page RoHS RoHS High Power Products ell 0.5/1.0 (0.02/0.04) ...

Related keywords